Interaction between U/UO2 bilayers and hydrogen studied by in-situ X-ray diffraction

This paper reports experiments investigating the reaction of H$_{2}$ with uranium metal-oxide bilayers. The bilayers consist of $\leq$ 100 nm of epitaxial $\alpha$-U (grown on a Nb buffer deposited on sapphire) with a UO$_{2}$ overlayer of thicknesses of between 20 and 80 nm. The oxides were made either by depositing via reactive magnetron sputtering, or allowing the uranium metal to oxidise in air at room temperature. The bilayers were exposed to hydrogen, with sample temperatures between 80 and 200 C, and monitored via in-situ x-ray diffraction and complimentary experiments conducted using Scanning Transmission Electron Microscopy - Electron Energy Loss Spectroscopy (STEM-EELS). Small partial pressures of H$_{2}$ caused rapid consumption of the U metal and lead to changes in the intensity and position of the diffraction peaks from both the UO$_{2}$ overlayers and the U metal. There is an orientational dependence in the rate of U consumption. From changes in the lattice parameter we deduce that hydrogen enters both the oxide and metal layers, contracting the oxide and expanding the metal. The air-grown oxide overlayers appear to hinder the H$_{2}$-reaction up to a threshold dose, but then on heating from 80 to 140 C the consumption is more rapid than for the as-deposited overlayers. STEM-EELS establishes that the U-hydride layer lies at the oxide-metal interface, and that the initial formation is at defects or grain boundaries, and involves the formation of amorphous and/or nanocrystalline UH$_{3}$. This explains why no diffraction peaks from UH$_{3}$ are observed. {\textcopyright British Crown Owned Copyright 2017/AWE}Comment: Submitted for peer revie

Oxidation and passivation of the uranium nitride (001) surface

The oxidation of uranium mononitride is a potential issue when considering this material as a nuclear fuel. This work investigates the rate and mechanism of this reaction at room temperature, giving insight into fuel surface oxidation during manufacture and storage. Chemical and structural investigation of the ideal surface of an epitaxial (001) UN thin film, shows that a UO2+xNy layer forms on the surface, highlighting the need for better understanding of the U-N-O system. Below this, a U2N3 interlayer is detected. The topotactic formation of these layers is predicted to play a critical role in the passivation measured during long-duration structural investigation

Personal transport for disabled people Design and manufacture

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