Women in physics in Zimbabwe

This paper reports on the state of women in physics in Zimbabwe since 2002. Three universities have physics departments: the University of Zimbabwe, National University of Science and Technology, and Midlands State University. These institutions are all state owned. A 10-year survey shows a limited female enrollment at the undergraduate level. We report on the challenges faced by women in physics starting from the primary level of education due to culture and custom. Another reason is the lack of resources owing to the economic hardships currently experienced in the country. The authors suggest possible solutions to the current shortage of women in physics and in science in general.https://aip.scitation.org/journal/apc2020-06-03am2019Physic

Electrical characterisation of electron beam exposure induced defects in silicon

The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.National Research Foundation of South Africa.http://www.elsevier.com/locate/physb2017-01-31hb2016Physic

Rare earth interstitial-complexes in Ge : hybrid density functional studies

Please read abstract in the article.The National Research Foundation (NRF) of South Africa [98961]http://www.elsevier.com/locate/nimb2018-10-15hj2017Physic

Rare earth substitutional impurities in germanium : a hybrid density functional theory study

Please read abstract in the article.The National Research Foundation (NRF) of South Africa [(UID) 98961]http://www.elsevier.com/locate/nimb2018-10-15hj2017Physic

Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

Please read abstract in the article.The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).http://www.elsevier.com/locate/mssp2020-01-01hj2018Physic

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type gallium arsenide by electron beam exposure prior to Schottky metallization. The GaAs crystals were exposed to incident electrons at sub-threshold energies which are deemed low and insufficient to form defects through ion solid interactions. DLTS revealed a set of electron traps different from those commonly observed in n-GaAs after particle irradiation. These different signatures from the same radiation type suggest that different mechanisms are responsible for defect formation in the two electron irradiation processes. An analysis of the conditions under which the defects were formed was done to distil a number of possible defect formation mechanisms using the experimental evidence obtained.The South African National Research Foundation (NRF) and the University of Pretoria.http://www.elsevier.com/locate/nimb2018-10-30Physic

The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

Please read abstract in the article.The University of Pretoria and the National Research Foundation (NRF) of South Africa, Grant number 98961.http://www.elsevier.com/locate/nimb2018-10-15hj2017Physic

Defect levels induced by double substitution of B and N in 4H-SiC

Please read abstract in the article.The National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). Emmanuel Igumbor acknowledge the University of South Africa for financial support through the Postdoctoral Research Fellowship programme.http://www.elsevier.com/locate/nimb2020-03-01hj2019Physic

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

Please read abstract in the article.The National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).http://iopscience.iop.org/journal/0953-89842019-04-01hj2018Physic

In situ study of low-temperature irradiation-induced defects in silicon carbide

Please read abstract in the article.The National Research Foundation (NRF) (Grant No. 11174) and the University of Pretoria.http://link.springer.com/journal/116642020-03-22hj2020Physic