Resonant tunnelling via InAs self-organized quantum dot states

InAs quantum dots formed by submonolayer insertion of InAs into the GaAs quantum well of a GaAs/AlAs double barrier resonant tunnelling structure were studied. A series of sharp resonant tunnelling peaks in I-V characteristics of resonant tunnelling diodes with InAs insertions were observed. Temperature and magnetic field dependent I-V studies and theoretical modeling led us to conclude that these peaks are the result of resonant tunnelling through localized states associated with InAs quantum dots. (C) 1998 Elsevier Science B.V; All rights reserved