Non-equilibrium spin polarization effects in spin-orbit coupling system and contacting metallic leads

We study theoretically the current-induced spin polarization effect in a two-terminal mesoscopic structure which is composed of a semiconductor two-dimensional electron gas (2DEG) bar with Rashba spin-orbit (SO) interaction and two attached ideal leads. The nonequilibrium spin density is calculated by solving the scattering wave functions explicitly within the ballistic transport regime. We found that for a Rashba SO system the electrical current can induce spin polarization in the SO system as well as in the ideal leads. The induced polarization in the 2DEG shows some qualitative features of the intrinsic spin Hall effect. On the other hand, the nonequilibrium spin density in the ideal leads, after being averaged in the transversal direction, is independent of the distance measured from the lead/SO system interface, except in the vicinity of the interface. Such a lead polarization effect can even be enhanced by the presence of weak impurity scattering in the SO system and may be detectable in real experiments.Comment: 6 pages,5 figure

Quantifying spin Hall angles from spin pumping: Experiments and Theory

Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating permalloy/normal metal (N) bilayers into a coplanar waveguide. A dc spin current in N can be generated by spin pumping in a controllable way by ferromagnetic resonance. The transverse dc voltage detected along the permalloy/N has contributions from both the anisotropic magnetoresistance (AMR) and the spin Hall effect, which can be distinguished by their symmetries. We developed a theory that accounts for both. In this way, we determine the spin Hall angle quantitatively for Pt, Au and Mo. This approach can readily be adapted to any conducting material with even very small spin Hall angles.Comment: 4 pages, 4 figure

Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures

The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting cases of low and high temperatures. Here we extend the theory to give an accurate description of the intermediate regime which is often relevant for room temperature experiments. Employing the self-consistent multiband envelope function approach, we determine the spin splitting of electron subbands in n-(001) zinc blende semiconductor quantum structures. Using these results we calculate spin relaxation rates as a function of temperature and obtain excellent agreement with experimental data.Comment: 9 pages, 4 figure

Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems

We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes.Comment: 4 pages, 3 figure

Kinetic magnetoelectric effect in a 2D semiconductor strip due to boundary-confinement induced spin-orbit coupling

In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper we show that, in the presence of boundary-confinement induced spin-orbit coupling, a longitudinal charge current circulating through a 2D semiconductor strip may cause \textit{strong} non-equilibrium spin accumulation near both edges of the strip. The spins will be polarized along the normal of the 2DEG plane but in opposite directions at both edges of the strip. This phenomenon is essentially a kinetic magnetoelectric effect from the theoretical points of view, but it manifests in a very similar form as was conceived in a spin Hall effect.Comment: 7 pages, 4 fig

Ab initio calculation of intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect beyond the four band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the $ac$ spin Hall conductivity in the semiconductors is large in pure as well as doped semiconductors.Comment: Phys. Rev. Lett. (accepted

Long range scattering effects on spin Hall current in pp-type bulk semiconductors

Employing a nonequilibrium Green's function approach, we examine the effects of long-range hole-impurity scattering on spin-Hall current in $p$-type bulk semiconductors within the framework of the self-consistent Born approximation. We find that, contrary to the null effect of short-range scattering on spin-Hall current, long-range collisions do produce a nonvanishing contribution to the spin-Hall current, which is independent of impurity density in the diffusive regime and relates only to hole states near the Fermi surface. The sign of this contribution is opposite to that of the previously predicted disorder-independent spin-Hall current, leading to a sign change of the total spin-Hall current as hole density varies. Furthermore, we also make clear that the disorder-independent spin-Hall effect is a result of an interband polarization directly induced by the dc electric field with contributions from all hole states in the Fermi sea.Comment: 9 pages, 1 figur

Analysis of phonon-induced spin relaxation processes in silicon

We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an extensive set of matrix element expressions for all of the important spin-flip transitions in the multi-valley conduction band. The scattering angle has an explicit dependence on the electron wavevectors, phonon polarization, valley position and spin orientation of the electron. Comparison of the derived analytical expressions with results of empirical pseudopotential and adiabatic band charge models shows excellent agreement.Comment: 30 pages,10 figure

Zero-field spin splitting in a two-dimensional electron gas with the spin-orbit interaction revisited

We consider a two-dimensional electron gas (2DEG) with the Rashba spin-orbit interaction (SOI) in presence of a perpendicular magnetic field. We derive analytical expressions of the density of states (DOS) of a 2DEG with the Rashba SOI in presence of magnetic field by using the Green's function technique. The DOS allows us to obtain the analytical expressions of the magnetoconductivities for spin-up and spin-down electrons. The conductivities for spin-up and spin-down electrons oscillate with different frequencies and gives rise to the beating patterns in the amplitude of the Shubnikov de Hass (SdH) oscillations. We find a simple equation which determines the zero-field spin splitting energy if the magnetic field corresponding to any beat node is known from the experiment. Our analytical results reproduce well the experimentally observed non-periodic beating patterns, number of oscillations between two successive nodes and the measured zero-field spin splitting energy.Comment: 5 pages, 2 figure

Spin Hall effect in clean two dimensional electron gases with Rashba spin-orbit coupling

We study the spin polarization induced by a current flow in clean two dimensional electron gases with Rashba spin-orbit coupling. This geometric effect originates from special properties of the electron's scattering at the edges of the sample. In wide samples, the spin polarization has it largest value at low energies (close to the bottom of the band) and goes to zero at higher energies. In this case, the spin polarization is dominated by the presence of evanescent modes which have an explicit spin component outside the plane. In quantum wires, on the other hand, the spin polarization is dominated by interference effects induced by multiple scattering at the edges. Here, the spin polarization is quite sensitive to the value of the Fermi energy, especially close to the point where a new channel opens up. We analyzed different geometries and found that the spin polarization can be strongly enhanced.Comment: 10 pages, 13 figures, high quality figures available upon reques