2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

© 2017 IEEE. Luminescence imaging is a widely used characterization technique for silicon photovoltaics. However, the tools used to acquire images typically utilize a silicon CCD array for detection, which is a poor absorber at silicon luminescence wavelengths. This leads to a smearing effect in the measured image which can be characterized by a point spread function (PSF). If the true PSF is known then the measured image can be restored through deconvolution. Several methods exist for determining a PSF for a particular imaging system and different extraction techniques can lead to variations in the PSF result, yet no studies have provided comprehensive analysis of PSF deconvolution accuracy when applied to luminescence imaging. In this work, several new techniques have been designed and investigated in order to test PSF deconvolution results, with a view to quantifying improvement or errors generated and potentially leading towards improved image restoration

Conference Record of the IEEE Photovoltaic Specialists Conference

Luminescence imaging is a widely used characterization technique for silicon photovoltaics. However, the tools used to acquire images typically utilize a silicon CCD array for detection, which is a poor absorber at silicon luminescence wavelengths. This leads to a smearing effect in the measured image which can be characterized by a point spread function (PSF). If the true PSF is known then the measured image can be restored through deconvolution. Several methods exist for determining a PSF for a particular imaging system and different extraction techniques can lead to variations in the PSF result, yet no studies have provided comprehensive analysis of PSF deconvolution accuracy when applied to luminescence imaging. In this work, several new techniques have been designed and investigated in order to test PSF deconvolution results, with a view to quantifying improvement or errors generated and potentially leading towards improved image restoration

Modeling Boron-Oxygen Degradation and Self-Repairing Silicon PV Modules in the Field

Photovoltaic (PV) cells manufactured using p-type Czochralski wafers can degrade significantly in the field due to boron-oxygen (BO) defects. Commercial hydrogenation processes can now passivate such defects; however, this passivation can be destabilized under certain conditions. Module operating temperatures are rarely considered in defect studies, and yet are critical to understanding the degradation and passivation destabilization that may occur in the field. Here we show that the module operating temperatures are highly dependent on location and mounting, and the impact this has on BO defects in the field. The System Advisor Model is fed with typical meteorological year data from four locations around the world (Hamburg, Sydney, Tucson, and Wuhan) to predict module operating temperatures. We investigate three PV system mounting types: building integrated (BIPV), rack-mounted rooftop, and rack mounted on flat ground for a centralized system. BO defect reactions are then simulated, using a three-state model based on experimental values published in the literature and the predicted module operating temperatures. The simulation shows that the BIPV module in Tucson reaches 94 °C and stays above 50 °C for over 1600 h per year. These conditions could destabilize over one-third of passivated BO defects, resulting in a 0.4% absolute efficiency loss for the modules in this work. This absolute efficiency loss could be double for higher efficiency solar cell structures, and modules. On the other hand, passivation of BO defects can occur in the field if hydrogen is present and the module is under the right environmental conditions. It is therefore important to consider the specific installation location and type (or predicted operating temperatures) to determine the best way to treat BO defects. Modules that experience such extreme sustained conditions should be manufactured to ensure incorporation of hydrogen to enable passivation of BO defects in the field, thereby enabling a "self-repairing module"

Rapid mitigation of carrier-induced degradation in commercial silicon solar cells

We report on the progress for the understanding of carrier-induced degradation (CID) in p-type mono and multi-crystalline silicon (mc-Si) solar cells, and methods of mitigation. Defect formation is a key aspect to mitigating CID. Illuminated annealing can be used for both mono and mc-Si solar cells to reduce CID. The latest results of an 8-s UNSW advanced hydrogenation process applied to industrial p-type Czochralski PERC solar cells are shown with average efficiency enhancements of 1.1% absolute from eight different solar cell manufacturers. Results from three new industrial CID mitigation tools are presented, reducing CID to 0.8-1.1% relative, compared to 4.2% relative on control cells. Similar advanced hydrogenation processes can also be applied to multi-crystalline silicon passivated emitter with rear local contact (PERC) cells, however to date, the processes take longer and are less effective. Modifications to the firing processes can also suppress CID in multi-crystalline cells during subsequent illumination. The most stable results are achieved with a multi-stage process consisting of a second firing process at a reduced firing temperature, followed by extended illuminated annealing