29 research outputs found

    Chemical analysis of thin films at Sandia National Laboratories

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    The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films

    Chemical reactivity and the structure of gels

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    Chemical reactivity and the structure of gels

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    The structures of sel-gel-derived networks are a product of a series of condensation reactions. In solution, the evolving structures are limited to species which are stable in the synthesis medium (alcohol/water). During consolidation metastable species form, which are temporarily stabilized by the high viscosity of the surrounding matrix. Chemical reactivity of gel-derived networks provides insight to their structure and vice versa

    Raman Analysis of Inorganic Thin Films*

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    Techniques for the Raman analysis of plasma-deposited submicrometer silicon films on metallic substrates and dielectric films on Raman-active substrates will be described and typical results will be presented.</jats:p
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