Contactless charge carrier mobility measurement in organic field-effect transistors

With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively generate and probe an alternating current in the OFET channel. The time lag between drive and probe can directly be related to the mobility, as is shown experimentally and numerically. As the scheme does not require the injection or uptake of charges it is fundamentally insensitive to contact resistances. Particularly for ambipolar materials the true mobilities are found to be substantially larger than determined by conventional (direct current) schemes

Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced

Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors

During prolonged application of a gate bias, organic field-effect transistors show a gradual shift of the threshold voltage towards the applied gate bias voltage. The shift follows a stretched-exponential time dependence governed by a relaxation time. Here, we show that a thermodynamic analysis reproduces the observed exponential dependence of the relaxation time on the oxidation potential of the semiconductor. The good fit with the experimental data validates the underlying assumptions. It demonstrates that this operational instability is a straightforward thermodynamically driven process that can only be eliminated by eliminating water from the transistor

Bound State Transfer Matrix for AdS5 x S5 Superstring

We apply the algebraic Bethe ansatz technique to compute the eigenvalues of the transfer matrix constructed from the general bound state S-matrix of the light-cone AdS5 x S5 superstring. This allows us to verify certain conjectures on the quantum characteristic function, and to extend them to the general case.Comment: 36 pages, LaTeX, v2: typos corrected, ref added; v3: accepted for publication in JHEP

String hypothesis for the AdS_5 x S^5 mirror

We discuss the states which contribute in the thermodynamic limit of the mirror theory, the latter is obtained from the light-cone gauge-fixed string theory in the AdS_5 x S^5 background by the double-Wick rotation. We analyze the Bethe-Yang equations for the mirror theory and formulate the string hypothesis. We show that in the thermodynamic limit solutions of the Bethe-Yang equations arrange themselves into Bethe string configurations similar to the ones appearing in the Hubbard model. We also derive a set of equations describing the bound states and the Bethe string configurations of the mirror theory.Comment: LaTex, 18 pages, typos are correcte