45 research outputs found

    Microstructure of GaN Grown on (111) Si by MOCVD

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    Gallium nitride was grown on (111) Si by MOCVD by depositing an AIN buffer at 108O"C and then GaN at 1060 {degrees}C. The 2.2pm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were able to examine the microstructure of material between cracks with TEM. The character and arrangement of dislocation are much like those of GaN grown on Al{sub 2}O{sub 3}: -2/3 pure edge and - 1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly disoriented with respect to neighboring material. The 30 nm AIN buffer is continuous, indicating that AIN wets the Si, in contrast to GaN on Al{sub 2}O{sub 3}

    Surface Morphology and Microstructure of Al-O Alloys Grown by ECR Plasma Deposition

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    The growth of polycrystalline and amorphous aluminum-oxygen alloy films using electron-beam evaporation of Al in the presence of an O{sub 2} electron-cyclotron-resonance (ECR) plasma was investigated for film compositions varying from 40% Al (Al{sub 2}O{sub 3}) to near 100% Al (AlO{sub x}). Processing parameters such as deposition temperature and ion energy were varied to study their effects on surface texture and film microstructure. The Al-rich films (AlO{sub x}) contain polycrystalline fcc Al grains with finely dispersed second-phase particles of {gamma}-Al{sub 2}O{sub 3} (1-2 nm in size). The surface roughness of these films was measured by atomic force microscopy and found to increase with sample bias and deposition temperature. Stoichiometric Al{sub 2}O{sub 3} films grown at 100{degrees}C and 400{degrees}C without an applied bias were amorphous, while an applied bias of -140 V formed a nanocrystalline {gamma}-Al{sub 2}O{sub 3} film at 400{degrees}C. The surface roughness of the Al{sub 2}O{sub 3} increased with temperature while ion irradiation produced a smoother surface

    Growth and Mechanical and Tribological Characterization of Multi-Layer Hard Carbon Films

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    Vacuum-arc deposition is used to deposit multilayer C films by modulating the sample bias during deposition. Effect of varying the sublayer thickness in multilayer films consisting of alternating layers of ``hard`` (68.4 GPa, -100 V bias) and ``soft`` (27.5 GPa, - 200 V bias) was investigated. Films consisting of equal thickness layers of hard and soft material and an individual layer thickness varying from 10 to 35 nm were deposited. Mechanical property measurements were obtained by finite element modeling of nanoindentation load-displacement curves. The film hardness values were about 20% below the average of the component layers and relatively independent of the layer thickness. TEM revealed deterioration of the multilayer structure when the sublayer thickness was below 15 nm due to implantation damage of the hard layers caused by the energetic C{sup +} ions of the soft layers (-2000 V bias) deposited over them. Pin-on-disk wear tests show that the wear rate drops when sublayer thickness is decreased below 20 nm and remains constant with further decreases in the layer thickness

    Stability of multi-component epilayers and nanopattern formation

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    A uniform multi-component epilayer may lose stability under the combined action of spinodal decomposition and epilayer–substrate interaction, separating into multiple phases. The phases may further self-organize into regular patterns. This paper investigates the compositional stability of a ternary epliayer and the subsequent emergence of nanoscale patterns. Multiple energetic forces and kinetic processes involving phase separation, phase coarsening and phase refining are incorporated into a continuous phase field model. Linear stability analysis is performed by perturbing a uniform concentration field into a sinusoidal field with small amplitude and arbitrary wavelength. The analysis shows that the epilayer–substrate interaction counteracts the coarsening effect of phase boundary energy and may lead to the formation of steady nanoscale patterns. Detailed analysis also reveals the interaction of multi-phases and its effect on the stability condition. Numerical simulation of evolving concentration field is discussed at the end of the paper. The simulations show that the pattern formation process of multi-component epilayers involves remarkably rich dynamics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/43296/1/11051_2004_Article_3304.pd
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