Negative magnetoresistance and phase slip process in superconducting nanowires

We argue that the negative magnetoresistance of superconducting nanowires, which was observed in recent experiments, can be explained by the influence of the external magnetic field on the critical current of the phase slip process. We show that the suppression of the order parameter in the bulk superconductors made by an external magnetic field can lead to an enhancement of both the first $I_{c1}$ and the second $I_{c2}$ critical currents of the phase slip process in nanowires. Another mechanism of an enhancement of $I_{c1}$ can come from decreasing the decay length of the charge imbalance $\lambda_Q$ at weak magnetic fields because $I_{c1}$ is inversely proportional to $\lambda_Q$. The enhancement of the first critical current leads to a larger intrinsic dissipation of the phase slip process. It suppresses the rate of both the thermo-activated and/or quantum fluctuated phase slips and results in decreasing the fluctuated resistance.Comment: 7 pages, 4 figure

Microscopic model for multiple flux transitions in mesoscopic superconducting loops

A microscopic model is constructed which is able to describe multiple magnetic flux transitions as observed in recent ultra-low temperature tunnel experiments on an aluminum superconducting ring with normal metal - insulator - superconductor junctions [Phys. Rev. B \textbf{70}, 064514 (2004)]. The unusual multiple flux quantum transitions are explained by the formation of metastable states with large vorticity. Essential in our description is the modification of the pairing potential and the superconducting density of states by a sub-critical value of the persistent current which modulates the measured tunnel current. We also speculate on the importance of the injected non-equilibrium quasiparticles on the stability of these metastable states.Comment: 6 pages, 3 figure

Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist

We performed comparative experimental investigation of superconducting NbN nanowires which were prepared by means of positive-and negative electron-beam lithography with the same positive tone Poly-methyl-methacrylate (PMMA) resist. We show that nanowires with a thickness 4.9 nm and widths less than 100 nm demonstrate at 4.2 K higher critical temperature and higher density of critical and retrapping currents when they are prepared by negative lithography. Also the ratio of the experimental critical-current to the depairing critical current is larger for nanowires prepared by negative lithography. We associate the observed enhancement of superconducting properties with the difference in the degree of damage that nanowire edges sustain in the lithographic process. A whole range of advantages which is offered by the negative lithography with positive PMMA resist ensures high potential of this technology for improving performance metrics of superconducting nanowire singe-photon detectors