Experimental Study of the Effect of External Signal on Microwave Oscillations in a Nonrelativistic Electron Beam with Virtual Cathode

The effect of an external harmonic signal on the characteristics of microwave generation in a nonrelativistic electron beam with virtual cathode (VC) formed in a static retarding electric field (low-voltage vircator system) has been experimentally studied. A significant increase in the vircator generation power is observed when the frequency of the external signal is close to the frequency of VC oscillations. At large detunings, a broadband chaotic generation is observed.Comment: 3 pages, 2 figure

Dynamic Behavior in Piezoresponse Force Microscopy

Frequency dependent dynamic behavior in Piezoresponse Force Microscopy (PFM) implemented on a beam-deflection atomic force microscope (AFM) is analyzed using a combination of modeling and experimental measurements. The PFM signal comprises contributions from local electrostatic forces acting on the tip, distributed forces acting on the cantilever, and three components of the electromechanical response vector. These interactions result in the bending and torsion of the cantilever, detected as vertical and lateral PFM signals. The relative magnitudes of these contributions depend on geometric parameters of the system, the stiffness and frictional forces of tip-surface junction, and operation frequencies. The dynamic signal formation mechanism in PFM is analyzed and conditions for optimal PFM imaging are formulated. The experimental approach for probing cantilever dynamics using frequency-bias spectroscopy and deconvolution of electromechanical and electrostatic contrast is implemented.Comment: 65 pages, 15 figures, high quality version available upon reques

Materials Contrast in Piezoresponse Force Microscopy

Piezoresponse Force Microscopy contrast in transversally isotropic material corresponding to the case of c+ - c- domains in tetragonal ferroelectrics is analyzed using Green's function theory by Felten et al. [J. Appl. Phys. 96, 563 (2004)]. A simplified expression for PFM signal as a linear combination of relevant piezoelectric constant are obtained. This analysis is extended to piezoelectric material of arbitrary symmetry with weak elastic and dielectric anisotropies. This result provides a framework for interpretation of PFM signals for systems with unknown or poorly known local elastic and dielectric properties, including nanocrystalline materials, ferroelectric polymers, and biopolymers.Comment: 20 pages, 3 figures, 1 table, accepted to Appl. Phys. Lett. (without Appendices), algebraic errors were correcte

Experimental and Theoretical Investigation into the Effect of the Electron Velocity Distribution on Chaotic Oscillations in an Electron Beam under Virtual Cathode Formation Conditions

The effect of the electron transverse and longitudinal velocity spread at the entrance to the interaction space on wide-band chaotic oscillations in intense multiple-velocity beams is studied theoretically and numerically under the conditions of formation of a virtual cathode. It is found that an increase in the electron velocity spread causes chaotization of virtual cathode oscillations. An insight into physical processes taking place in a virtual cathode multiple velocity beam is gained by numerical simulation. The chaotization of the oscillations is shown to be associated with additional electron structures, which were separated out by constructing charged particle distribution functions.Comment: 9 pages, 8 figure

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode.Comment: to appear in Physical Review Letter

Defect driven flexo-chemical coupling in thin ferroelectric films

Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultra-thin layer of ambient screening charges, characterized by a surface screening length. This geometry is typical for the scanning probe piezoelectric force microscopy. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexo-chemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTiO3 films containing a layer of elastic defects. A nontrivial result is the ferroelectricity persisting at film thicknesses below 4 nm, temperatures lower than 350 K and relatively high surface screening length (~0.1 nm). The origin of this phenomenon is the re-building of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm, conditioned by the flexoelectric coupling and facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.Comment: 25 pages, 9 figure