Formation of the hotel business model based on the network management form

The competitive advantages, acquired by hotels using the network form of business organization, have been highlighted. Based on the analysis of the diverse opinions of specialists, the concept of a «hotel chain» has been clarified. Тhe difference between the concepts of «hotel chain» and «hotel brand» has been shown. The features of the formation of hotel chains in Russia have been emphasized. A management contract and its components, that require agreement between the hotel operator and the owner of an independent hotel, have been considered. The prospectivity for an independent hotel to conclude with a hotel operator of a franchise agreement with a view to joining the network has been shown. The data on the amount of franchisee contributions to franchisor from various hotel operators for certain hotel brands in 2018 have been presented

Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable.Comment: 18 pages, 4 figure