Relaxation Measurements of the Persistent Photoconductivity in Sulfur-Doped a-Si:H.

AbstractThe slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.</jats:p

Persistent Photoconductivity, the Staebler-Wronski Effect, and Long-Range Disorder in a-Si:H

ABSTRACTWe report measurements of the conductivity, thermopower, and conductance fluctuations before and after light exposure for a-Si:H samples that show either persistent photoconductivity (PPC) or a Staebler-Wronski effect. Both the conductivity and thermopower are changed by light exposure, but no change is observed in the difference between the conductivity and thermopower activation energies for any of the samples studied here. This suggests that the long-range disorder is unaffected by light exposure. For some samples, the magnitude or statistical properties of the conductance fluctuations are affected by light exposure. We compare these results to previous studies of the Staebler-Wronski effect and discuss their implications for models of the light-induced changes and the 1/f noise in a-Si:H.</jats:p

Influence of Deposition Conditions on the 1/f Noise in Hydrogenated Amorphous Silicon

ABSTRACTThe electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 Å/s to 33 Å/s have been studied. Infrared absorption spectroscopy shows an increase in S1-H2 content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.</jats:p

Microbiological removal of hydrogen sulfide from biogas by means of a separate biofilter system: experience with technical operation

The “BIO-Sulfex” biofilter of ATZ-EVUS removes hydrogen sulfide from biogas in a biological way. Hydrogen sulfide causes massive problems during power generation from biogas in a power plant, e.g. corrosion of engines and heat exchangers, and thus causes frequent and therefore expensive engine oil changes. The BIO-Sulfex module is placed between the digester and the power-plant and warrants a cost-effective, reliable and fully biological desulfurization. In the cleaned gas concentrations of less than 100 ppm can be achieved. Power-plant manufacturers usually demand less than 500 or less than 200 ppm. At present, several plants with biogas flow rates between 20 and 350 m3/h are in operation.</jats:p