Using the de Haas-van Alphen effect to map out the closed three-dimensional Fermi surface of natural graphite

The Fermi surface of graphite has been mapped out using de Haas van Alphen (dHvA) measurements at low temperature with in-situ rotation. For tilt angles $\theta>60^{\circ}$ between the magnetic field and the c-axis, the majority electron and hole dHvA periods no longer follow the $\cos(\theta)$ behavior demonstrating that graphite has a 3 dimensional closed Fermi surface. The Fermi surface of graphite is accurately described by highly elongated ellipsoids. A comparison with the calculated Fermi surface suggests that the SWM trigonal warping parameter $\gamma_3$ is significantly larger than previously thought

Dirac fermions at the H point of graphite: Magneto-transmission studies

We report on far infrared magneto-transmission measurements on a thin graphite sample prepared by exfoliation of highly oriented pyrolytic graphite. In magnetic field, absorption lines exhibiting a blue-shift proportional to sqrtB are observed. This is a fingerprint for massless Dirac holes at the H point in bulk graphite. The Fermi velocity is found to be c*=1.02x10^6 m/s and the pseudogap at the H point is estimated to be below 10 meV. Although the holes behave to a first approximation as a strictly 2D gas of Dirac fermions, the full 3D band structure has to be taken into account to explain all the observed spectral features.Comment: 4 pages, 4 figures, to appear in Phys. Rev. Let

In-plane current-voltage characteristics and oscillatory Josephson-vortex flow resistance in La-free Bi2+x_{2+x}Sr2−x_{2-x}CuO6+δ_{6+\delta} single crystals in high magnetic fields

We have investigated the in-plane $I(V)$ characteristics and the Josephson vortex flow resistance in high-quality La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+\delta}$ (Bi2201) single crystals in parallel and tilted magnetic fields at temperatures down to 40 mK. For parallel magnetic fields below the resistive upper critical field $H^{*}_{c2}$, the $I(V)$ characteristic obey a power-law with a smooth change with increasing magnetic-field of the exponent from above 5 down to 1. In contrast to the double-layer cuprate Bi2212, the observed smooth change suggests that there is no change in the mechanism of dissipation (no Kosterlitz-Thouless transition) over the range of temperatures investigated. At small angles between the applied field and the $ab$-plane, prominent current steps in the $I(V)$ characteristics and periodic oscillations of Josephson-vortex flow resistance are observed. While the current steps are periodic in the voltage at constant fields, the voltage position of the steps, together with the flux-flow voltage, increases nonlinearly with magnetic field. The $ab$-flow resistance oscillates as a function of field with a constant period over a wide range of magnetic fields and temperatures. The current steps in the $I(V)$ characteristics and the flow resistance oscillations can be linked to the motion of Josephson vortices across layers

Second order resonant Raman scattering in single layer tungsten disulfide (WS2_{2})

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.Comment: 6 pages, 4 figure

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.Comment: 5 pages, 4 figures, text + figs revised for clarit

Magneto-transport in high g-factor, low-density two-dimensional electron systems confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells

We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures and electron densities, the latter controlled by a gate voltage down to values of 1.10^11 cm^-2. A tilted-field configuration is used to induce Landau level crossings and magnetic transitions between quantum Hall states with different spin polarizations. A large filling factor dependent effective electronic g-factor is determined by the coincidence method and cyclotron resonance measurements. From these measurements the change in exchange-correlation energy at the magnetic transition is deduced. These results demonstrate the impact of many-body effects in tilted-field magneto-transport of high-mobility 2DESs confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells. The large tunability of electron density and effective g-factor, in addition, make this material system a promising candidate for the observation of a large variety of spin-related phenomena.Comment: 7 pages, 5 figure