Radiating Collapse with Vanishing Weyl stresses

In a recent approach in modelling a radiating relativistic star undergoing gravitational collapse the role of the Weyl stresses was emphasised. It is possible to generate a model which is physically reasonable by approximately solving the junction conditions at the boundary of the star. In this paper we demonstrate that it is possible to solve the Einstein field equations and the junction conditions exactly. This exact solution contains the Friedmann dust solution as a limiting case. We briefly consider the radiative transfer within the framework of extended irreversible thermodynamics and show that relaxational effects significantly alter the temperature profiles.Comment: 10 pages, submitted to IJMP-

Formation of caustics in Dirac-Born-Infeld type scalar field systems

We investigate the formation of caustics in Dirac-Born-Infeld type scalar field systems for generic classes of potentials, viz., massive rolling scalar with potential, $V(\phi)=V_0e^{\pm \frac{1}{2} M^2 \phi^2}$ and inverse power-law potentials with $V(\phi)=V_0/\phi^n,~0<n<2$. We find that in the case of\texttt{} exponentially decreasing rolling massive scalar field potential, there are multi-valued regions and regions of likely to be caustics in the field configuration. However there are no caustics in the case of exponentially increasing potential. We show that the formation of caustics is inevitable for the inverse power-law potentials under consideration in Minkowski space time whereas caustics do not form in this case in the FRW universe.Comment: 16 pages, 14 figures, major revision, conclusions strengthen, to appear in PR

Ge growth on ion-irradiated Si self-affine fractal surfaces

We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out on two halves of the same sample where only one half was ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge deposition, while the roughness increases by more than an order of magnitude on the pristine surface, a smoothing is observed for the ion-irradiated surface. For the ion-irradiated surface the correlation length xi increases from 32 nm to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov or layer-plus-island mode where islands grow on a wetting layer of about three atomic layers. On the pristine surface the islands are predominantly of square or rectangular shape, while on the ion-irradiated surface the islands are nearly diamond shaped. Changes of adsorption behaviour of deposited atoms depending on the roughness exponent (or the fractal dimension) of the substrate surface are discussed.Comment: 5 pages, 2 figures and 1 tabl

Laser phase modulation approaches towards ensemble quantum computing

Selective control of decoherence is demonstrated for a multilevel system by generalizing the instantaneous phase of any chirped pulse as individual terms of a Taylor series expansion. In the case of a simple two-level system, all odd terms in the series lead to population inversion while the even terms lead to self-induced transparency. These results also hold for multiphoton transitions that do not have any lower-order photon resonance or any intermediate virtual state dynamics within the laser pulse-width. Such results form the basis of a robustly implementable CNOT gate.Comment: 10 pages, 4 figures, PRL (accepted