108 research outputs found
Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy
Full text linkInfrared absorption in HgCdTe epitaxial material has been investigated using infrared spectromicroscopy to study the uniformity at dimensions representative of typical infrared detectors. Infrared transmission measurements were performed on HgCdTe material using an infrared beam diameter of 9 μm. Line scans and area maps of transmission spectra were obtained to investigate statistical variations in infrared absorption. The HgCdTe material demonstrates a high degree of uniformity, with a standard deviation in absorption coefficient near the sensitive turn-on region of less than 3% and standard deviation in extracted Hg1-xCdxTeHg1-xCdxTe compositon of 3×10−4.3×10−4. © 2003 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69699/2/APPLAB-83-18-3701-1.pd
Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes
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The 'French' Books of The Prelude: A Virtual Round Table
No full textSpecial issue on 'Wordsworth and France'Special issue on 'Wordsworth and France'Special issue on 'Wordsworth and France
Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy
No full textMBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations
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