Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization.Comment: 13 pages, 4 figures, submitted for publicatio

Bulk Superconductivity at 14 K in Single Crystals of Fe1+yTexSe1-x

Resistivity, magnetic susceptibility and heat capacity measurements are reported for single crystals of Fe1+yTexSe1-x grown via a modified Bridgeman method with 0 < y < 0.15, and x= 1, 0.9, 0.75, 0. 67, 0.55 and 0.5. Although resistivity measurements show traces of superconductivity near 14 K for all x except x=1, only crystals grown with compositions near x=0.5 exhibit bulk superconductivity. The appearance of bulk superconductivity correlates with a reduction in the magnitude of the magnetic susceptibility at room temperature and smaller values of y, the concentration of Fe in the Fe(2) site.Comment: Submitted to Phys. Rev.