Physics and application of photon number resolving detectors based on superconducting parallel nanowires

The Parallel Nanowire Detector (PND) is a photon number resolving (PNR) detector which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. PNDs were fabricated on 3-4 nm thick NbN films grown on MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. PNDs showed a counting rate of 80 MHz and a pulse duration as low as 660ps full width at half maximum (FWHM). Building the histograms of the photoresponse peak, no multiplication noise buildup is observable. Electrical and optical equivalent models of the device were developed in order to study its working principle, define design guidelines, and develop an algorithm to estimate the photon number statistics of an unknown light. In particular, the modeling provides novel insight of the physical limit to the detection efficiency and to the reset time of these detectors. The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise

High performance NbN nanowire superconducting single photon detectors fabricated on MgO substrates

We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on ultrathin NbN films grown at a temperature compatible with monolithic integration. NbN films ranging from 150nm to 3nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400C. The superconducting properties of NbN films were optimized studying the effects of deposition parameters on film properties. SSPDs were fabricated on high quality NbN films of different thickness (7 to 3nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300nm

Calibration and High Fidelity Measurement of a Quantum Photonic Chip

Integrated quantum photonic circuits are becoming increasingly complex. Accurate calibration of device parameters and detailed characterization of the prepared quantum states are critically important for future progress. Here we report on an effective experimental calibration method based on Bayesian updating and Markov chain Monte Carlo integration. We use this calibration technique to characterize a two qubit chip and extract the reflectivities of its directional couplers. An average quantum state tomography fidelity of 93.79+/-1.05% against the four Bell states is achieved. Furthermore, comparing the measured density matrices against a model using the non-ideal device parameters derived from the calibration we achieve an average fidelity of 97.57+/-0.96%. This pinpoints non-ideality of chip parameters as a major factor in the decrease of Bell state fidelity. We also perform quantum state tomography for Bell states while continuously varying photon distinguishability and find excellent agreement with theory

Demonstration of Free-space Reference Frame Independent Quantum Key Distribution

Quantum key distribution (QKD) is moving from research laboratories towards applications. As computing becomes more mobile, cashless as well as cardless payment solutions are introduced, and a need arises for incorporating QKD in a mobile device. Handheld devices present a particular challenge as the orientation and the phase of a qubit will depend on device motion. This problem is addressed by the reference frame independent (RFI) QKD scheme. The scheme tolerates an unknown phase between logical states that varies slowly compared to the rate of particle repetition. Here we experimentally demonstrate the feasibility of RFI QKD over a free-space link in a prepare and measure scheme using polarisation encoding. We extend the security analysis of the RFI QKD scheme to be able to deal with uncalibrated devices and a finite number of measurements. Together these advances are an important step towards mass production of handheld QKD devices

Enhanced spontaneous emission in a photonic crystal light-emitting diode

We report direct evidence of enhanced spontaneous emission in a photonic crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injected laterally from the periphery to the center of the PhC. A well-isolated emission peak at 1300nm from the PhC cavity mode is observed, and the enhancement of the spontaneous emission rate is clearly evidenced by time-resolved electroluminescence measurements, showing that our diode switches off in a time shorter than the bulk radiative and nonradiative lifetimesComment: 10 page

Cavity-enhanced superconducting single-photon detectors on GaAs substrate

Nanowire superconducting single photon detectors (SSPDs) are unique detectors for many applications in quantum information and communications technology, owing to their ultrafast photoresponse, low dark count rate and low timing jitter. However, they have limited detection efficiency due to small optical absorption in ultrathin wires. A promising approach to increase the photon absorption in SSPDs, is integrating them with advanced optical structures. We demonstrate the successful integration of SSPDs with optical microcavities based on GaAs/AlAs Bragg mirrors. Characterization of these devices reveals clear cavity enhancement of the detection efficiency, resulting in a peak value of18% at 2=l300nm and T=4.2

Superconducting parallel nanowire detector with photon number resolving functionality

We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise

Superconducting nanowire photon number resolving detector at telecom wavelength

The optical-to-electrical conversion, which is the basis of optical detectors, can be linear or nonlinear. When high sensitivities are needed single-photon detectors (SPDs) are used, which operate in a strongly nonlinear mode, their response being independent of the photon number. Nevertheless, photon-number resolving (PNR) detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication, the PNR functionality is key to many protocols for establishing, swapping and measuring entanglement, and can be used to detect photon-number-splitting attacks. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, e.g. in long-distance optical communications, fluorescence spectroscopy, optical time-domain reflectometry. We demonstrate here a PNR detector based on parallel superconducting nanowires and capable of counting up to 4 photons at telecommunication wavelengths, with ultralow dark count rate and high counting frequency

Towards a LED based on a photonic crystal nanocavity for single photon sources at telecom wavelength

A fundamental step towards achieving an "on demand" single photon source would be the possibility of electrical pumping for a single QD and thus the integration of such a device in an opto-electronic circuit. In this work we describe the fabrication process and preliminary results of a Light Emitting Diode (LED) to be integrated with a PhC nanocavity at telecom wavelength. We demonstrate the possibility of an effective electric pumping of the QDs embedded into the membrane by contacting the n-doped and p-doped layers of the thin membrane, which allows the fabrication of a PhC nanocavity on it. (C) 2007 Elsevier B.V. All rights reserved

Filtrage fréquentiel par un dispositif à réseau intracavité inscrit sur cristaux liquides

International audienceNous proposons une méthode de filtrage reconfigurable sans mouvement mécanique associant un réseau de Bragg intracavité à un réseau de diffraction traditionnel. Un dispositif à cristaux liquides a été réalisé pour tester la validité du modèle théorique