Surface impedance anisotropy of YBa2_2Cu3_3O6.95_{6.95} single crystals: electrodynamic basis of the measurements

An electrodynamic technique is developed for determining the components of surface impedance and complex conductivity tensors of HTSC single crystals on the basis of measured quantities of a quality factor and a resonator frequency shift. A simple formula is obtained for a geometrical factor of a crystal in the form of a plate with dimensions $b\gg a>c$ in a microwave magnetic field ${\bf H_{\omega}}\perp ab$. To obtain the c-axis complex conductivity from measurements at ${\bf H_{\omega}}\parallel ab$ we propose a procedure which takes account of sample size effects. With the aid of the technique involved temperature dependences of all impedance and conductivity tensors components of YBa$_2$Cu$_3$O$_{6.95}$ single crystal, grown in BaZrO$_3$ crucible, are determined at a frequency of $f=9.4$ GHz in its normal and superconducting states. All of them proved to be linear at $T<T_c/2$, and their extrapolation to zero temperature gives the values of residual surface resistance $R_{ab}(0)\approx 40$ $\mu\Omega$ and $R_c(0)\approx 0.8$ m$\Omega$ and magnetic field penetration depth $\lambda_{ab}(0)\approx 150$ nm and $\lambda_c(0)\approx 1.55$ $\mu$m.Comment: 9 pages, 7 figures. Submitted to Phys.Rev.B 05Jun2002; accepted for publication 21Febr200

Superfluid density in the underdoped YBa_2Cu_3O_{7-x}: Evidence for d-density wave order of pseudogap

The investigation of the penetration depth \lambda_{ab}(T,p) in YBa_2Cu_3O_{7-x} crystals allowed to observe the following features of the superfluid density n_s(T,p)\propto \lambda_{ab}^{-2}(T,p) as a function of temperature T<Tc/2 and carrier concentration 0.078\le p\le 0.16 in CuO_2 planes: (i) n_s(0,p) depends linearly on p, (ii) the derivative |dn_s(T,p)/dT|_{T\to 0} depends on p slightly in the optimally and moderately doped regions (0.10<p\le 0.16); however, it rapidly increases with p further lowering and (iii) the latter finding is accompanied by the linear low-temperature dependence [-\Delta n_s(T)]\propto T changing to [-\Delta n_s(T)]\propto \sqrt{T}. All these peculiarities can be treated in the framework of d-density wave scenario of electronic processes in underdoped high-Tc materials.Comment: 4 pages, 5 figures. To be published in Phys.Rev.Let

Observation of a Transition from BCS to HTSC-like Superconductivity in Ba_{1-x}K_xBiO_3 Single Crystals

A study of temperature dependences of the upper critical field B_{c2}(T) and surface impedance Z(T)=R(T)+iX(T) in Ba_{1-x}K_xBiO_3 single crystals that have transition temperatures in the range 6 x>0.4) reveals a transition from BCS to unusual type of superconductivity. B_{c2}(T) curves corresponding to the crystals that have T_c>20 K have positive curvature (like in some HTSC), and those of the crystals with T_c<15 K fall on the usual Werthamer-Helfand-Hohenberg curve. R(T) and X(T) dependences of the crystals with T_c~30 K and T_c~11 K are respectively linear (like in HTSC) and exponential (BCS) in the temperature range T << T_c. The experimental results are discussed in connection with the extended saddle point model by Abrikosov.Comment: 5 pages, 5 figure

c-axis penetration depth in Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} single crystals measured by ac-susceptibility and cavity perturbation technique

The $c$-axis penetration depth $\Delta\lambda_c$ in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function $\Delta\lambda_c(T)\propto T$ in the temperature range T<0.5 T_c. Electrodynamic analysis of the impedance anisotropy has allowed us to estimate $\lambda_c(0)\approx 50 \mu$m in BSCCO crystals overdoped with oxygen ($T_c\approx 84$ K) and $\lambda_c(0)\approx 150 \mu$m at the optimal doping level ($T_c\approx 90$ K).Comment: 5 pages, 4 figure

Normal state resistivity of Ba1−x_{1-x}Kx_xFe2_2As2_2: evidence for multiband strong-coupling behavior

We present theoretical analysis of the normal state resistivity in multiband superconductors in the framework of Eliashberg theory. The results are compared with measurements of the temperature dependence of normal state resistivity of high-purity Ba$_{0.68}$K$_{0.32}$Fe$_{2}$As$_{2}$ single crystals with the highest reported transition temperature $T_c$ = 38.5 K. The experimental data demonstrate strong deviations from the Bloch-Gr\"{u}neisen behavior, namely the tendency to saturation of the resistivity at high temperatures. The observed behavior of the resistivity is explained within the two band scenario when the first band is strongly coupled and relatively clean, while the second band is weakly coupled and is characterized by much stronger impurity scattering.Comment: 4 pages, 3 figures, to be published in JETP Letters Vol.94, N

Phenomenological description of the microwave surface impedance and complex conductivity of high-TcT_c single crystals

Measurements of the microwave surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ and of the complex conductivity $\sigma_s(T)$ of high-quality, high-$T_c$ single crystals of YBCO, BSCCO, TBCCO, and TBCO are analyzed. Experimental data of $Z_s(T)$ and $\sigma_s(T)$ are compared with calculations based on a modified two-fluid model which includes temperature-dependent quasiparticle scattering and a unique temperature variation of the density of superconducting carriers. We elucidate agreement as well as disagreement of our analysis with the salient features of the experimental data. Existing microscopic models are reviewed which are based on unconventional symmetry types of the order parameter and on novel mechanisms of quasiparticle relaxation.Comment: 15 pages, 17 figures, 1 tabl

Pseudogap in the microwave response of YBa_2Cu_3O_{7-x}

The in-plane and out-of-plane surface impedance and microwave conductivity components of one and the same YBa_2Cu_3O_{7-x} (0.07\le x\le 0.47) single crystal are determined in the wide ranges of temperature T and carrier concentration p in CuO_2 planes. The following features of the superfluid density n_s(T,p)\propto\lambda_{ab}^{-2}(T,p) are observed at T<Tc/2 and 0.078\le p\le 0.16: (i) n_s(0,p) depends linearly on p, (ii) the derivative |dn_s(T,p)/dT|_{T\to 0} depends on p slightly in the optimally and moderately doped regions (0.10<p\le 0.16); however, it rapidly increases with p further lowering and (iii) the latter finding is accompanied by the linear low-temperature dependence \Delta n_s(T)\propto(-T) changing to \Delta n_s(T)\propto(-\sqrt{T}). For optimum oxygen content the temperature dependence of the normalized imaginary part of the c-axis conductivity \lambda_c^2(0)/\lambda_c^2(T) is found to be strikingly similar to that of \lambda_{ab}^2(0)/\lambda_{ab}^2(T) and becomes more convex with p lowering. \lambda_c^{-2}(0,p) values are roughly proportional to the normal state conductivities \sigma_c(T_c,p) along the c-axis. All these properties can be treated in the framework of d-density wave order of pseudogap.Comment: 7 pages, 9 figures, presented at EUCAS 2003 (September 14-18), submitted to SUS

Penetration of Josephson vortices and measurement of the c-axis penetration depth in Bi2Sr2CaCu2O8+δBi_{2}Sr_{2}CaCu_{2}O_{8+\delta}: Interplay of Josephson coupling, surface barrier and defects

The first penetration field H_{J}(T) of Josephson vortices is measured through the onset of microwave absorption in the locked state, in slightly overdoped $\rm{Bi_{2}Sr_{2}CaCu_{2}O_{8+\delta}}$ single crystals (T_{c} ~ 84 K). The magnitude of H_{J}(T) is too large to be accounted for by the first thermodynamic critical field H_{c1}(T). We discuss the possibility of a Bean-Livingston barrier, also supported by irreversible behavior upon flux exit, and the role of defects, which relates H_{J}(T) to the c-axis penetration depth $\lambda_{c}(T)$. The temperature dependence of the latter, determined by a cavity perturbation technique and a theoretical estimate of the defect-limited penetration field are used to deduce from H_{J}(T) the absolute value of $\lambda_{c}(0)=(35 \pm 15) \mu m$.Comment: 9 pages, 6 figure

Characteristic features of the temperature dependence of the surface impedance in polycrystalline MgB2_2 samples

The real $R_s(T)$ and imaginary $X_s(T)$ parts of the surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ in polycrystalline MgB$_2$ samples of different density with the critical temperature $T_c\approx 38$ K are measured at the frequency of 9.4 GHz and in the temperature range $5\le T<200$ K. The normal skin-effect condition $R_s(T)=X_s(T)$ at $T\ge T_c$ holds only for the samples of the highest density with roughness sizes not more than 0.1 $\mu$m. For such samples extrapolation $T\to 0$ of the linear at $T<T_c/2$ temperature dependences $\lambda_L(T)=X_s(T)/\omega\mu_0$ and $R_s(T)$ results in values of the London penetration depth $\lambda_L(0)\approx 600$ \AA and residual surface resistance $R_{res}\approx 0.8$ m$\Omega$. In the entire temperature range the dependences $R_s(T)$ and $X_s(T)$ are well described by the modified two-fluid model.Comment: 7 pages, 3 figures. Europhysics Letters, accepted for publicatio