Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: resonant spin amplification versus spin mode-locking

The coherent spin dynamics of resident carriers, electrons and holes, in semiconductor quantum structures is studied by periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed theoretically. Spin polarization accumulation is manifested either as resonant spin amplification or as mode-locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble

Radiative corrections to the magnetic-dipole transition amplitude in B-like ions

The one-electron quantum-electrodynamic corrections to the magnetic-dipole transition amplitude between the fine-structure levels (1s^2 2s^2 2p) ^2P_3/2 - ^2P_1/2 in boronlike ions are calculated to all orders in (\alpha Z). The results obtained serve for improving the theoretical accuracy of the lifetime of the (1s^2 2s^2 2p) ^2P_3/2 level in boronlike argon

Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells

Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and time-resolved Kerr rotation in the regime of resonant spin amplification (based on pulsed excitation) provide a complementary measure of electron spin relaxation time. Influence of electron localization on long-lived spin coherence is examined by means of spectral and temperature dependencies. Various scenarios of spin polarization generation (via the trion and exciton states) are analyzed and difference between continuous-wave and pulsed excitations is considered. Effects related to inhomogeneous distribution of $g$-factor and anisotropic spin relaxation time on measured quantities are discussed.Comment: 26 pages, 19 figures, submitted to special issue on Optical Orientation of Semiconductor Science and Technolog