Electroresistance effects in ferroelectric tunnel barriers

Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction dependent ferroelectric barrier. The transport mechanisms, including direct tunneling, Fowler-Nordheim tunneling and thermionic injection, are considered in the calculation of the electroresistance as a function of ferroelectric barrier properties, given by the properties of the ferroelectric, the barrier thickness, and the metal properties, and in turn of the polarization direction. Large electroresistance is favored in thicker films for all three transport mechanisms but on the expense of current density. However, switching between two transport mechanisms, i.e., direct tunneling and Fowler-Nordheim tunneling, by polarization switching yields a large electroresistance. Furthermore, the most versatile playground in optimizing the device performance was found to be the electrode properties, especially screening length and band offset with the ferroelectric.Comment: 24pages, 7 figures, revised, one figure adde

Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface; a deep trapping level of high concentration; the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as built-in voltage, charge density and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.Comment: 14 pages with 4 figures, manuscript under revision at Journal of Applied Physics for more than 1 year (submitted May 2004, first revision September 2004, second revision May 2005

Switching properties of self-assembled ferroelectric memory cells

In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode

Ferroelectric Nanotubes

We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9 (SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (V-oc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V-oc as high as 50V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO

Sensitive methods for estimating the anchoring strength of nematic liquid crystals on Langmuir-Blodgett monolayers of fatty acids

The anchoring of the nematic liquid crystal N-(p-methoxybenzylidene)-p-butylaniline (MBBA) on Langmuir-Blodgett monolayers of fatty acids (COOHC$_{n}$H$_{2n+1}$) was studied as a function of the length of the fatty acid alkyl chains, $n$ ($n = 15, 17, 19, 21$). The monolayers were deposited onto ITO-coated glass plates which were used to assemble sandwich cells of various thickness that were filled with MBBA in the nematic phase. The mechanism of relaxation from the flow-induced quasi-planar to the surface-induced homeotropic alignment was studied for the four decreases linearly with increasing the length of the alkyl chains $n$ which suggests that the Langmuir-Blodgett film plays a role in the phenomenon. This fact was confirmed by a sensitive estimation of the anchoring strength of MBBA on the fatty acid monolayers after anchoring breaking which takes place at the transition between two electric-field--induced turbulent states, denoted as DSM1 and DSM2. It was found that the threshold electric field for the anchoring breaking, which can be considered as a measure of the anchoring strength, also decreases linearly as $n$ increases. Both methods thus possess a high sensitivity in resolving small differences in anchoring strength. In cells coated with mixed Langmuir-Blodgett monolayers of two fatty acids ($n=15$ and $n=17$) a maximum of the relaxation speed was observed when the two acids were present in equal amount. This observation homeotropic cells by changing the ratio between the components of the surfactant film.Comment: LaTeX article, 20 pages, 15 figures, 17 EPS files. 1 figure added, references moved. Submitted to Phys. Rev.