3,103 research outputs found

    Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

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    We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.Comment: Related papers at http://pettagroup.princeton.ed

    Scalable gate architecture for densely packed semiconductor spin qubits

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    We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure a spin relaxation time T1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 microeV, which indicates that 50 GHz two-qubit gate operation speeds are feasible

    Solitons and Black Holes in a Generalized Skyrme Model with Dilaton-Quarkonium field

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    Skyrme theory is among the viable effective theories which emerge from low-energy limit of quantum chromodynamics. Many of its generalizations include also a dilaton. Here we find new self-gravitating solutions, both solitons and black holes, in a Generalized Skyrme Model (GSM) in which a dilaton is present. The investigation of the properties of the solutions is done numerically. We find that the introduction of the dilaton in the theory does not change the picture qualitatively, only quantitatively. The model considered here has one free parameter more than the Einstein-Skyrme model which comes from the potential of the dilaton. We have applied also the turning point method to establish that one of the black-hole branches of solutions is unstable. The turning point method here is based on the first law of black-hole thermodynamics a detailed derivation of which is given in the Appendix of the paper.Comment: 19 pages, 10 figures; v2: typos corrected, comments adde

    A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

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    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.Comment: Related papers at http://pettagroup.princeton.ed
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