413 research outputs found

    Long-Range Coulomb Effect on the Antiferromagnetism in Electron-doped Cuprates

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    Using mean-field theory, we illustrate the long-range Coulomb effect on the antiferromagnetism in the electron-doped cuprates. Because of the Coulomb exchange effect, the magnitude of the effective next nearest neighbor hopping parameter increases appreciably with increasing the electron doping concentration, raising the frustration to the antiferromagnetic ordering. The Fermi surface evolution in the electron-doped cuprate Nd2−x_{2-x}Cex_xCuO4_4 and the doping dependence of the onset temperature of the antiferromagnetic pseudogap can be reasonably explained by the present consideration.Comment: 4 pages, 4 figure

    Antiferromagnetism and Superconductivity in layered organic conductors: Variational cluster approach

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    The κ\kappa-(ET)2_2X layered conductors (where ET stands for BEDT-TTF) are studied within the dimer model as a function of the diagonal hopping t′t^\prime and Hubbard repulsion UU. Antiferromagnetism and d-wave superconductivity are investigated at zero temperature using variational cluster perturbation theory (V-CPT). For large UU, N\'eel antiferromagnetism exists for t′<tc2′t' < t'_{c2}, with tc2′∼0.9t'_{c2}\sim 0.9. For fixed t′t', as UU is decreased (or pressure increased), a dx2−y2d_{x^2-y^2} superconducting phase appears. When UU is decreased further, the a dxyd_{xy} order takes over. There is a critical value of tc1′∼0.8t'_{c1}\sim 0.8 of t′t' beyond which the AF and dSC phases are separated by Mott disordered phase.Comment: 4 pages, 4 figures. Investigation of the d_xy phase added + discussion of gap symmetr

    Tunneling between edge states in a quantum spin Hall system

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    We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.Comment: 4 pages, 3 figures; published versio
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