Confinement induced instability of thin elastic film

A confined incompressible elastic film does not deform uniformly when subjected to adhesive interfacial stresses but with undulations which have a characteristic wavelength scaling linearly with the thickness of the film. In the classical peel geometry, undulations appear along the contact line below a critical film thickness or below a critical curvature of the plate. Perturbation analysis of the stress equilibrium equations shows that for a critically confined film the total excess energy indeed attains a minima for a finite amplitude of the perturbations which grow with further increase in the confinement.Comment: 11 pages, 6 figure

Motivating knowledge agents : can incentive pay overcome social distance?

This paper studies the interaction of incentive pay and social distance in the dissemination of information. We analyse theoretically as well as empirically the e ect of incentive pay when agents have pro-social objectives, but also preferences over dealing with one social group relative to another. In a randomised eld experiment undertaken across 151 villages in South India, local agents were hired to spread information about a public health insurance programme. Relative to at pay, incentive pay improves knowledge transmission to households that are socially distant from the agent, but not to households similar to the agent

Exploiting entanglement in communication channels with correlated noise

We develop a model for a noisy communication channel in which the noise affecting consecutive transmissions is correlated. This model is motivated by fluctuating birefringence of fiber optic links. We analyze the role of entanglement of the input states in optimizing the classical capacity of such a channel. Assuming a general form of an ensemble for two consecutive transmissions, we derive tight bounds on the classical channel capacity depending on whether the input states used for communication are separable or entangled across different temporal slots. This result demonstrates that by an appropriate choice, the channel capacity may be notably enhanced by exploiting entanglement.Comment: 9 pages, 5 figure

Microscopic origin of low frequency noise in MoS₂ field-effect transistors

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal Boron Nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noisemagnitude in these devices