A benzene interference single-electron transistor

Interference effects strongly affect the transport characteristics of a benzene single-electron transistor (SET) and for this reason we call it interference SET (I-SET). We focus on the effects of degeneracies between many-body states of the isolated benzene. We show that the particular current blocking and selective conductance suppression occurring in the benzene I-SET are due to interference effects between the orbitally degenerate states. Further we study the impact of reduced symmetry due to anchor groups or potential drop over the molecule. We identify in the quasi-degeneracy of the involved molecular states the necessary condition for the robustness of the results.Comment: 17pages, 9 figures, revised versio

All-electric-spin control in interference single electron transistors

Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux provide the solid-state analogous. Intra-molecular interference has been recently discussed in molecular junctions. Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics and spin-qubit applications. The device consists of an interference single electron transistor (ISET), where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange coupling on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved.Comment: 9 pages, 5 figure