Lateral diffusive spin transport in layered structures

A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on the lateral current underneath, in contrast to the conventional 1D modeling by the collinear configuration of lead/channel/lead. Our theory is convenient and appropriate for the current in plane configuration of an all-metallic spintronics structure as well as for the planar structure of a semiconductor with ferromagnetic contacts. For both systems we predict the optimal contact width for maximal magnetoresistance and propose an electrical measurement of the spin diffusion length for a wide range of materials.Comment: 4 pages, 3 figure

Electric readout of magnetization dynamics in a ferromagnet-semiconductor system

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third connected to a capacitor, affect the currents and voltages. In a steady state, the voltage on the capacitor is related to spin accumulation in the channel. When the magnetization of one of the terminals is rotated, a transient current is triggered. This effect can be used for electrical detection of magnetization reversal dynamics of an electrode or for dynamical readout of the alignment of two magnetic contacts.Comment: Revised version, 8 pages, 3 figure

Spintronics for electrical measurement of light polarization

The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin polarization may be determined by electrical means of two ferromagnet/semiconductor Schottky barriers. The proposed scheme allows for time-resolved detection of spin accumulation in small structures and may have a device application.Comment: Revised version, 8 two-column pages, 5 figures; Added: a comprehensive time dependent analysis, figures 3b-3c & 5, equations 6 & 13-16 and 3 references. submitted to Phys. Rev.

Femtosecond Demagnetization and Hot Hole Relaxation in Ferromagnetic GaMnAs

We have studied ultrafast photoinduced demagnetization in GaMnAs via two-color time-resolved magneto-optical Kerr spectroscopy. Below-bandgap midinfrared pump pulses strongly excite the valence band, while near-infrared probe pulses reveal sub-picosecond demagnetization that is followed by an ultrafast ($\sim$1 ps) partial recovery of the Kerr signal. Through comparison with InMnAs, we attribute the signal recovery to an ultrafast energy relaxation of holes. We propose that the dynamical polarization of holes through $p$-$d$ scattering is the source of the observed probe signal. These results support the physical picture of femtosecond demagnetization proposed earlier for InMnAs, identifying the critical roles of both energy and spin relaxation of hot holes.Comment: 7 pages, 6 figure

Ultrafast demagnetization in the sp-d model: a theoretical study

We propose and analyze a theoretical model of ultrafast light-induced magnetization dynamics in systems of localized spins that are coupled to carriers' spins by sp-d exchange interaction. A prominent example of a class of materials falling into this category are ferromagnetic (III,Mn)V semiconductors, in which ultrafast demagnetization has been recently observed. In the proposed model light excitation heats up the population of carriers, taking it out of equilibrium with the localized spins. This triggers the process of energy and angular momentum exchange between the two spin systems, which lasts for the duration of the energy relaxation of the carriers. We derive the Master equation for the density matrix of a localized spin interacting with the hot carriers and couple it with a phenomenological treatment of the carrier dynamics. We develop a general theory within the sp-d model and we apply it to the ferromagnetic semiconductors, taking into account the valence band structure of these materials. We show that the fast spin relaxation of the carriers can sustain the flow of polarization between the localized and itinerant spins leading to significant demagnetization of the localized spin system, observed in (III,Mn)V materials.Comment: 15 pages, 8 figure

Electrical expression of spin accumulation in ferromagnet/semiconductor structures

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.Comment: A review to appear in Mod. Phys. Lett.

Zero- and one-dimensional magnetic traps for quasi-particles

We investigate the possibility of trapping quasi-particles possessing spin degree of freedom in hybrid structures. The hybrid system we are considering here is composed of a semi-magnetic quantum well placed a few nanometers below a ferromagnetic micromagnet. We are interested in two different micromagnet shapes: cylindrical (micro-disk) and rectangular geometry. We show that in the case of a micro-disk, the spin object is localized in all three directions and therefore zero-dimensional states are created, and in the case of an elongated rectangular micromagnet, the quasi-particles can move freely in one direction, hence one-dimensional states are formed. After calculating profiles of the magnetic field produced by the micromagnets, we analyze in detail the possible light absorption spectrum for different micromagnet thicknesses, and different distances between the micromagnet and the semimagnetic quantum well. We find that the discrete spectrum of the localized states can be detected via spatially-resolved low temperature optical measurement.Comment: 15 pages, 9 figure