204 research outputs found
Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond
In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of
buried graphitic microchannels fabricated in single-crystal diamond by direct
MeV ion microbeam writing. Metal deposition of variable-thickness masks was
adopted to implant channels with emerging endpoints and high temperature
annealing was performed in order to induce the graphitization of the
highly-damaged buried region. When an electrical current was flowing through
the biased buried channel, the structure was clearly evidenced by KPM maps of
the electrical potential of the surface region overlying the channel at
increasing distances from the grounded electrode. The KPM profiling shows
regions of opposite contrast located at different distances from the endpoints
of the channel. This effect is attributed to the different electrical
conduction properties of the surface and of the buried graphitic layer. The
model adopted to interpret these KPM maps and profiles proved to be suitable
for the electronic characterization of buried conductive channels, providing a
non-invasive method to measure the local resistivity with a micrometer
resolution. The results demonstrate the potential of the technique as a
powerful diagnostic tool to monitor the functionality of all-carbon
graphite/diamond devices to be fabricated by MeV ion beam lithography.Comment: 21 pages, 5 figure
High resolution structural characterisation of laser-induced defect clusters inside diamond
Laser writing with ultrashort pulses provides a potential route for the
manufacture of three-dimensional wires, waveguides and defects within diamond.
We present a transmission electron microscopy (TEM) study of the intrinsic
structure of the laser modifications and reveal a complex distribution of
defects. Electron energy loss spectroscopy (EELS) indicates that the majority
of the irradiated region remains as bonded diamond.
Electrically-conductive paths are attributed to the formation of multiple
nano-scale, -bonded graphitic wires and a network of strain-relieving
micro-cracks
Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond
We report on the systematic characterization of conductive micro-channels
fabricated in single-crystal diamond with direct ion microbeam writing. Focused
high-energy (~MeV) helium ions are employed to selectively convert diamond with
micrometric spatial accuracy to a stable graphitic phase upon thermal
annealing, due to the induced structural damage occurring at the end-of-range.
A variable-thickness mask allows the accurate modulation of the depth at which
the microchannels are formed, from several {\mu}m deep up to the very surface
of the sample. By means of cross-sectional transmission electron microscopy
(TEM) we demonstrate that the technique allows the direct writing of amorphous
(and graphitic, upon suitable thermal annealing) microstructures extending
within the insulating diamond matrix in the three spatial directions, and in
particular that buried channels embedded in a highly insulating matrix emerge
and electrically connect to the sample surface at specific locations. Moreover,
by means of electrical characterization both at room temperature and variable
temperature, we investigate the conductivity and the charge-transport
mechanisms of microchannels obtained by implantation at different ion fluences
and after subsequent thermal processes, demonstrating that upon
high-temperature annealing, the channels implanted above a critical damage
density convert to a stable graphitic phase. These structures have significant
impact for different applications, such as compact ionizing radiation
detectors, dosimeters, bio-sensors and more generally diamond-based devices
with buried three-dimensional all-carbon electrodes
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ChemInform Abstract: CROSS CORRELATION EFFECTS IN THE NUCLEAR SPIN-LATTICE RELAXATION OF POLYCRYSTALLINE O-, M-, AND P-DIMETHOXYBENZENE
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