60 research outputs found
Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As
We report single-color, time resolved magneto-optical measurements in
ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control
of the magnetization precession by applying two successive ultrashort laser
pulses. The magnetic field and temperature dependent experiments reveal the
collective Mn-moment nature of the oscillatory part of the time-dependent Kerr
rotation, as well as contributions to the magneto-optical signal that are not
connected with the magnetization dynamics.Comment: 6 pages, 3 figures, accepted in Applied Physics Letter
Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field
We have investigated the magnetoresistance of strongly asymmetric double-well
structures formed by a thin AlGaAs barrier grown far from the interface in the
GaAs buffer of standard heterostructures. In magnetic fields oriented parallel
to the electron layers, the magnetoresistance exhibits an oscillation
associated with the depopulation of the higher occupied subband and with the
field-induced transition into a decoupled bilayer. In addition, the increasing
field transfers electrons from the triangular to rectangular well and, at high
enough field value, the triangular well is emptied. Consequently, the
electronic system becomes a single layer which leads to a sharp step in the
density of electron states and to an additional minimum in the
magnetoresistance curve.Comment: 3 pages, 3 figure
In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells
We have investigated experimentally the magnetoresistance of strongly
asymmetric double-wells. The structures were prepared by inserting a thin
AlGaAs barrier into the GaAs buffer layer of a standard
modulation-doped GaAs/AlGaAs heterostructure. The resulting
double-well system consists of a nearly rectangular well and of a triangular
well coupled by tunneling through the thin barrier. With a proper choice of the
barrier parameters one can control the occupancy of the two wells and of the
two lowest (bonding and antibonding) subbands. The electron properties can be
further influenced by applying front- or back-gate voltage.Comment: 4 pages, 5 figures, elsart/PHYEAUTH macros; to be presented on the
EP2DS-15 Conference in Nara, Japan. Revised version. To appear in Physica
Photoluminescence rings in Corbino disk at quantizing magnetic fields
Spatially resolved photoluminescence of modulation doped AlGaAs/GaAs
heterojunction was investigated in a sample of Corbino disk geometry subject to
strong perpendicular magnetic fields. Significant spatial modulation of the
photoluminescence was observed in form of one or more concentric rings which
travelled across the sample when the magnetic field strength was varied. A
topology of the observed structure excludes the possibility of being a trace of
an external current. The effect is attributed to formation of compressible and
incompressible stripes in a 2DEG density gradient across the sample.Comment: 5 two-column pages, 4 figures (one of them in color
Laser-induced Precession of Magnetization in GaMnAs
We report on the photo-induced precession of the ferromagnetically coupled Mn
spins in (Ga,Mn)As, which is observed even with no external magnetic field
applied. We concentrate on various experimental aspects of the time-resolved
magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the
origin of the detected signals. We show that the measured data typically
consist of several different contributions, among which only the oscillatory
signal is directly connected with the ferromagnetic order in the sample.Comment: 4 pages, 5 figure
Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy
We employ Faraday and Kerr effect spectroscopy in the infrared range to
investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The
band structure of this archetypical dilute-moment ferromagnetic semiconductor
has been a matter of controversy, fueled partly by previous measurements of the
unpolarized infrared absorption and their phenomenological impurity-band
interpretation. The infrared magneto-optical effects we study arise directly
from the spin-splitting of the carrier bands and their chiral asymmetry due to
spin-orbit coupling. Unlike the unpolarized absorption, they are intimately
related to ferromagnetism and their interpretation is much more microscopically
constrained in terms of the orbital character of the relevant band states. We
show that the conventional theory of the disordered valence band with dominant
As p-orbital character and coupled by kinetic-exchange to Mn local moments
accounts semi-quantitatively for the overall characteristics of the measured
infrared magneto-optical spectra.Comment: 4 pages 3 figure
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
A combination of high-resolution x-ray diffraction and a new technique of
x-ray standing wave uorescence at grazing incidence is employed to study the
structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during
post-growth annealing steps. We find that the film is formed by a uniform,
single crystallographic phase epilayer covered by a thin surface layer with
enhanced Mn concentration due to Mn atoms at random non-crystallographic
positions. In the epilayer, Mn incorporated at interstitial position has a
dominant effect on lattice expansion as compared to substitutional Mn. The
expansion coeffcient of interstitial Mn estimated from our data is consistent
with theory predictions. The concentration of interstitial Mn and the
corresponding lattice expansion of the epilayer are reduced by annealing,
accompanied by an increase of the density of randomly distributed Mn atoms in
the disordered surface layer. Substitutional Mn atoms remain stable during the
low-temperature annealing.Comment: 9 pages, 9 figure
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