A tight-binding analysis of the electronic properties of III-nitride semiconductors

This thesis divides into two distinct parts, both of which are underpinned by the tight-binding model. The first part covers our implementation of the tight-binding model in conjunction with the Berry phase theory of electronic polarisation to probe the atomistic origins of spontaneous polarisation and piezoelectricity as well as attempting to accurately calculate the values and coefficients associated with these phenomena. We first develop an analytic model for the polarisation of a one-dimensional linear chain of atoms. We compare the zincblende and ideal wurtzite structures in terms of effective charges, spontaneous polarisation and piezoelectric coefficients, within a first nearest neighbour tight-binding model. We further compare these to real wurtzite structures and conclude that accurate quantitative results are beyond the scope of this model but qualitative trends can still be described. The second part of this thesis deals with implementing the tight-binding model to investigate the effect of local alloy fluctuations in bulk AlGaN alloys and InGaN quantum wells. We calculate the band gap evolution of Al1_xGaxN across the full composition range and compare it to experiment as well as fitting bowing parameters to the band gap as well as to the conduction band and valence band edges. We also investigate the wavefunction character of the valence band edge to determine the composition at which the optical polarisation switches in Al1_xGaxN alloys. Finally, we examine electron and hole localisation in InGaN quantum wells. We show how the built-in field localises the carriers along the c-axis and how local alloy fluctuations strongly localise the highest hole states in the c-plane, while the electrons remain delocalised in the c-plane. We show how this localisation affects the charge density overlap and also investigate the effect of well width fluctuations on the localisation of the electrons

Variation of Sidewall Passivation on Sub-um Selectively Grown Ge-on-Si Devices Towards Single Photon Avalanche Detectors

Developing single photon avalanche diodes (SPADs) at short-wave infrared (SWIR) wavelengths beyond 1000 nm has attracted interest lately. Numerous quantum technology applications such as light detection and ranging (LIDAR), imaging through obscurants and quantum communications require sensitivity in this region. In quantum communications, operation at the telecoms wavelengths of 1310 nm and 1550 nm is essential. Ge-on-Si SPADs offer potential for lower afterpulsing and higher single photon detection efficiencies in the SWIR in comparison with InGaAs/InP SPADs, at a lower cost due to Si foundry compatibility. In this study, Ge-on-Si devices are fabricated on silicon-on-insulator (SOI) substrates, with a separate absorption, charge and multiplication layer (SACM) geometry and a lateral Si multiplication region. This Si foundry compatible process will allow for future integration with Si waveguides and optical fibres. The Ge is selectively grown inside sub-μm wide SiO2 trenches, reducing the threading dislocation in comparison with bulk Ge; a typical process for integrated Ge detectors. Here we deliberately exposed Ge sidewalls with an etch-back technique, to allow a passivation comparison not normally carried out in selectively grown devices planarised by chemical-mechanical polishing. Reduced dark currents are demonstrated using thermal GeO2 passivation in comparison to plasma-enhanced chemical-vapourdeposition SiO2. The improved passivation performance of GeO2 is verified by activation energy extraction and density of interface trap (Dit) calculations obtained from temperature-dependent capacitance-voltage (CV) and conductance-voltage (GV) measurements. This highlights the benefit of optimal surface passivation on sub-μm wide selectively grown Ge-on-SOI photodetector devices, potentially critical for waveguide integrated SPADs

Pseudo-planar Ge-on-Si Single-photon Avalanche Diode Detector with Record Low Noise-equivalent Power

Single-photon avalanche diode (SPAD) detectors are of significant interest for numerous applications, including light detection and ranging (LIDAR), and quantum technologies such as quantum-key distribution and quantum information processing. Here we present a record low noise-equivalent-power (NEP) for Ge-on-Si SPADs using a pseudo-planar design, showing high detection efficiency in the short-wave infrared; a spectral region which is key for quantum technologies and hugely beneficial for LIDAR. These devices can leverage the benefits of Si avalanche layers, with lower afterpulsing compared to InGaAs/InP, and reduced cost due to Si foundry compatibility. By scaling the SPAD pixels down to 26μm diameter, a step change in performance has been demonstrated, with significantly reduced dark count rates (DCRs), and low jitter (134ps). Ge-on-Si SPADs were fabricated using photolithography techniques and characterised using time-correlated single-photon counting. The DCR reaches as low as kilocount/s at 100K for excess bias up to ~5%. This reduction in DCR enables higher temperature operation; e.g. the DCR of a 26μm diameter pixel at 150 K is approximately equivalent to a 100 μm diameter pixel at 77 K (100s of kilocounts/s). These low values of DCR, coupled with the relatively temperature independent single photon detection efficiencies (SPDE) of ~29% (at 1310nm wavelength) leads to a record low NEP of 7.7×10−17WHz−1/2. This is approximately 2 orders of magnitude lower than previous similarly sized mesa-geometry Ge-on-Si SPADs. This technology can potentially offer a lowcost, Si foundry compatible SPAD operating at short-wave infrared wavelengths, with potential applications in quantum technologies and autonomous vehicle LIDAR

Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we investigate the pseudo-planar design with simulation and experiment to establish the spatial contributions to the dark-count rate, which will ultimately facilitate optimisation towards operation at temperatures compatible with Peltier cooler technologies

Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes

Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre’s avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised

Developing outcome, process and balancing measures for an emergency department longitudinal patient monitoring system using a modified Delphi

Background: Early warning score systems have been widely recommended for use to detect clinical deterioration in patients. The Irish National Emergency Medicine Programme has developed and piloted an emergency department specific early warning score system. The objective of this study was to develop a consensus among frontline healthcare staff, quality and safety staff and health systems researchers regarding evaluation measures for an early warning score system in the Emergency Department.Methods: Participatory action research including a modified Delphi consensus building technique with frontline hospital staff, quality and safety staff, health systems researchers, local and national emergency medicine stakeholders was the method employed in this study. In Stage One, a workshop was held with the participatory action research team including frontline hospital staff, quality and safety staff and health systems researchers to gather suggestions regarding the evaluation measures. In Stage Two, an electronic modified-Delphi study was undertaken with a panel consisting of the workshop participants, key local and national emergency medicine stakeholders. Descriptive statistics were used to summarise the characteristics of the panellists who completed the questionnaires in each round. The mean Likert rating, standard deviation and 95% bias-corrected bootstrapped confidence interval for each variable was calculated. Bonferroni corrections were applied to take account of multiple testing. Data were analysed using Stata 14.0 SE.Results: Using the Institute for Healthcare Improvement framework, 12 process, outcome and balancing metrics for measuring the effectiveness of an ED-specific early warning score system were developed.Conclusion: There are currently no published measures for evaluating the effectiveness of an ED early warning score system. It was possible in this study to develop a suite of evaluation measures using a modified Delphi consensus approach. Using the collective expertise of frontline hospital staff, quality and safety staff and health systems researchers to develop and categorise the initial set of potential measures was an innovative and unique element of this study.Keywords: Emergency department, Early warning score system, Longitudinal patient monitoring, Evaluation measure

Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise

Germanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging applications. The Ge absorption layer detects light at wavelengths up to ≈ 1600 nm with the Si acting as an avalanche medium, providing high gain with low excess avalanche noise. Such APDs are typically used in waveguide configurations as growing a sufficiently thick Ge absorbing layer is challenging. Here, we report on a new vertically illuminated pseudo-planar Ge-on-Si APD design utilizing a 2 µm thick Ge absorber and a 1.4 µm thick Si multiplication region. At a wavelength of 1550 nm, 50 µm diameter devices show a responsivity of 0.41 A/W at unity gain, a maximum avalanche gain of 101 and an excess noise factor of 3.1 at a gain of 20. This excess noise factor represents a record low noise for all configurations of Ge-on-Si APDs. These APDs can be inexpensively manufactured and have potential integration in silicon photonic platforms allowing use in a variety of applications requiring high-sensitivity detectors at wavelengths around 1550 nm

Differential cross section measurements for the production of a W boson in association with jets in proton–proton collisions at √s = 7 TeV

Measurements are reported of differential cross sections for the production of a W boson, which decays into a muon and a neutrino, in association with jets, as a function of several variables, including the transverse momenta (pT) and pseudorapidities of the four leading jets, the scalar sum of jet transverse momenta (HT), and the difference in azimuthal angle between the directions of each jet and the muon. The data sample of pp collisions at a centre-of-mass energy of 7 TeV was collected with the CMS detector at the LHC and corresponds to an integrated luminosity of 5.0 fb[superscript −1]. The measured cross sections are compared to predictions from Monte Carlo generators, MadGraph + pythia and sherpa, and to next-to-leading-order calculations from BlackHat + sherpa. The differential cross sections are found to be in agreement with the predictions, apart from the pT distributions of the leading jets at high pT values, the distributions of the HT at high-HT and low jet multiplicity, and the distribution of the difference in azimuthal angle between the leading jet and the muon at low values.United States. Dept. of EnergyNational Science Foundation (U.S.)Alfred P. Sloan Foundatio

Optimasi Portofolio Resiko Menggunakan Model Markowitz MVO Dikaitkan dengan Keterbatasan Manusia dalam Memprediksi Masa Depan dalam Perspektif Al-Qur`an

Risk portfolio on modern finance has become increasingly technical, requiring the use of sophisticated mathematical tools in both research and practice. Since companies cannot insure themselves completely against risk, as human incompetence in predicting the future precisely that written in Al-Quran surah Luqman verse 34, they have to manage it to yield an optimal portfolio. The objective here is to minimize the variance among all portfolios, or alternatively, to maximize expected return among all portfolios that has at least a certain expected return. Furthermore, this study focuses on optimizing risk portfolio so called Markowitz MVO (Mean-Variance Optimization). Some theoretical frameworks for analysis are arithmetic mean, geometric mean, variance, covariance, linear programming, and quadratic programming. Moreover, finding a minimum variance portfolio produces a convex quadratic programming, that is minimizing the objective function ðð¥with constraintsð ð 𥠥 ðandð´ð¥ = ð. The outcome of this research is the solution of optimal risk portofolio in some investments that could be finished smoothly using MATLAB R2007b software together with its graphic analysis