Role of the direct processes in low-energy deuteron interactions

An extended analysis of the key role of direct interactions, i.e., breakup, stripping and pick-up processes, has been carried out for deuteron-induced reactions. Particular comments concern the deuteron breakup which is the dominant mechanism involved in surrogate reactions on heavy nuclei, around the Coulomb barrier.Comment: 5 pages, 3 figures. Contribution at Int. Conf. on Nucl. Data for Science and Technology (ND2016), 11-16.09.2016, Bruges, Belgiu

All Magnesium diboride Josephson Junctions with MgO and native oxide barriers

We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction characteristic with critical current-resistance product nearly independent of the junction area. The dependence of the critical current with temperature up to 20 K agrees with the [Ambegaokar and Baratoff, Phys. Rev. Lett. 10, 486 (1963)] expression. For the junctions with native-oxide, conductance at low bias exhibits subgap features while at high bias reveals thick barriers. As a result no supercurrent was observed in the latter, despite the presence of superconducting-gaps to over 30 K.Comment: 8 pages with 3 figure

Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling

We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar \Omega \approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields.Comment: Supplementary Material at: http://journals.aps.org/prl/supplemental/10.1103/PhysRevLett.112.086601/TIPhonon_SM.pd

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature

Spin accumulation probed in multiterminal lateral all-metallic devices

We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel barriers. Although the four electrodes are designed as two electrode pairs of the same shape, they nonetheless all exhibit distinct switching fields. As a result the device can have several different magnetic configurations. From the measurements of the amplitude of the spin accumulation, we can identify these configurations, and using the diffusion equation for the spin imbalance, we extract the spin relaxation length $\lambda_\mathrm{sf} = 400 \pm 50$~nm and an interface spin current polarization $P = (10 \pm 1)$ at low temperature and $\lambda_\mathrm{sf} = 350 \pm 50$~nm, $P = (8 \pm 1)$ at room temperature

Large cone angle magnetization precession of an individual nanomagnet with dc electrical detection

We demonstrate on-chip resonant driving of large cone-angle magnetization precession of an individual nanoscale permalloy element. Strong driving is realized by locating the element in close proximity to the shorted end of a coplanar strip waveguide, which generates a microwave magnetic field. We used a microwave frequency modulation method to accurately measure resonant changes of the dc anisotropic magnetoresistance. Precession cone angles up to $9^{0}$ are determined with better than one degree of resolution. The resonance peak shape is well-described by the Landau-Lifshitz-Gilbert equation

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.Comment: 14 pages, 6 figures. Accepted in 2D Materials. https://doi.org/10.1088/2053-1583/aa882

Voltage generation by ferromagnetic resonance

A ferromagnet can resonantly absorbs rf radiation to sustain a steady precession of the magnetization around an internal or applied magnetic field. We show that under these ferromagnetic resonance (FMR) conditions, a dc voltage is generated at a normal-metal electric contact to a ferromagnet with spin-flip scattering. This mechanism allows an easy electric detection of magnetization dyamics

On-chip detection of ferromagnetic resonance of a single submicron permalloy strip

We measured ferromagnetic resonance of a single submicron ferromagnetic strip, embedded in an on-chip microwave transmission line device. The method used is based on detection of the oscillating magnetic flux due to the magnetization dynamics, with an inductive pick-up loop. The dependence of the resonance frequency on applied static magnetic field agrees very well with the Kittel formula, demonstrating that the uniform magnetization precession mode is being driven