Graphene-based spin-pumping transistor

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves nano-sized systems that function with very high speeds and in the absence of any applied bias, it is potentially useful for the development of transistors capable of combining large processing speeds, enhanced integration and extremely low power consumption

Graphene as a non-magnetic spin-current lens

In spintronics, the ability to transport magnetic information often depends on the existence of a spin current traveling between two different magnetic objects acting as source and probe. A large fraction of this information never reaches the probe and is lost because the spin current tends to travel omni-directionally. We propose that a curved boundary between a gated and a non-gated region within graphene acts as an ideal lens for spin currents despite being entirely of non-magnetic nature. We show as a proof of concept that such lenses can be utilized to redirect the spin current that travels away from a source onto a focus region where a magnetic probe is located, saving a considerable fraction of the magnetic information that would be otherwise lost.Comment: 9 pages, 3 figure