1 research outputs found
Properties
- Author
- A Coleman
- C Feldman
- Collet M.G. Depositing Silicon Nitride Layers at Low Temperatures Using a Photochemical Reaction. Electrochem. SOC.
- Cordes l.f. Evidence of excess silicon in reactively sputtered silicon nitride films
- CR Barnes
- DA Hardie
- Doo v.y. And d.r.Kerr. Investigation of refractory dielectrics for integrated circuits. International business machines corp., cambridge, mass. Nasa-cr-995. Contract no. Nas 12-105
- Drum c.m. And M.J. Rand. Chemical vapor deposition of a low-stress insulating film on silicon. Paper presented at 1968 electrochemical society meeting
- E Elliott
- E Feist
- E Kendall
- E Newman
- E Turkdogan
- EJM Kendall
- Gregor l.v. Study of silicon nitride as a dielectric material for microelectronic applications
- Gyulai j. Et al. Analysis of silicon nitride layers on silicon by back-scattering and channeling effect measurements
- JR Szedon
- k Bean
- Kendall e.j.m. Trapping levels in the silicon-silicon nitride system
- LN Aleksandrov
- N Parr
- NC Tombs
- PA Popper
- PS Schaffer
- S Yamazaki
- SM Hu
- SMT Sze
- Tokuyama t. Et al. Thermal expansion coefficient of a pyrolytically deposited silicon nitride film. Japan. J. Of appl. Phys., v. 6, no. 10
- Transetch-n-selective etchant for silicon nitride films. Transene company inc., newburyport turnpike, route 1, rowley, mass
- VY Doo
- VY Doo
- WM Wells
- Y Kuwano
- Publication venue
- 'Springer Science and Business Media LLC'
- Publication date
- 01/01/1971
- Field of study