31 research outputs found
Monolithic Pixel Sensors in Deep-Submicron SOI Technology
Monolithic pixel sensors for charged particle detection and imaging
applications have been designed and fabricated using commercially available,
deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin
layer of integrated full CMOS electronics from a high-resistivity substrate by
means of a buried oxide. The substrate is contacted from the electronics layer
through vias etched in the buried oxide, allowing pixel implanting and reverse
biasing. This paper summarizes the performances achieved with a first prototype
manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and
digital pixels on a 10 micrometer pitch. The design and preliminary results on
the analog section of a second prototype manufactured in the OKI 0.20
micrometer FD-SOI process are briefly discussed.Comment: Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia,
IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentatio
Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage
Characterisation of a CMOS active pixel sensor for use in the TEAM microscope
A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5
micron^2 pixels have been developed for direct imaging in transmission electron
microscopy as part of the TEAM project. We present the design and a full
characterisation of the detector. Data collected with electron beams at various
energies of interest in electron microscopy are used to determine the detector
response. Data are compared to predictions of simulation. The line spread
function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and
(7.4+/-0.6) micron, respectively, in good agreement with our simulation. We
measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and
0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron
reconstruction, the line spread function for 80 keV and 300 keV electrons
becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation
tolerance of the pixels has been tested up to 5 Mrad and the detector is still
functional with a decrease of dynamic range by ~30%, corresponding to a
reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to
leakage current increase, but identical line spread function performance.Comment: 19 pages, 14 figures, submitted to Nuclear Instruments and Methods
Radiation hardness of different silicon materials after high-energy electron irradiation
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of . The variation of the effective dopant concentration, the current related damage constant and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated