Implementation of a Monte Carlo method to model photon conversion for solar cells.

A physical model describing different photon conversion mechanisms is presented in the context of photovoltaic applications. To solve the resulting system of equations, a Monte Carlo ray-tracing model is implemented, which takes into account the coupling of the photon transport phenomena to the non-linear rate equations describing luminescence. It also separates the generation of rays from the two very different sources of photons involved (the sun and the luminescence centers). The Monte Carlo simulator presented in this paper is proposed as a tool to help in the evaluation of candidate materials for up- and downconversion. Some application examples are presented, exploring the range of values that the most relevant parameters describing the converter should have in order to give significant gain in photocurrent

Size-Dependent Photon Emission from Organometal Halide Perovskite Nanocrystals Embedded in an Organic Matrix.

In recent years, organometal halide perovskite materials have attracted significant research interest in the field of optoelectronics. Here, we introduce a simple and low-temperature route for the formation of self-assembled perovskite nanocrystals in a solid organic matrix. We demonstrate that the size and photoluminescence peak of the perovskite nanocrystals can be tuned by varying the concentration of perovskite in the matrix material. The physical origin of the blue shift of the perovskite nanocrystals’ emission compared to its bulk phase is also discussed.D.D. acknowledges the Department of Physics, University of Cambridge and the KACST-Cambridge University Joint Centre of Excellence for financial support. G.L. thanks the Gates Cambridge Trust for support. Q.S. acknowledges the Imperial College Junior Research Fellowship. J.L.M.D. acknowledges ERC Advanced Investigator Grant, Novox, ERC-2009-adG247276. This work was supported by the Engineering and Physical Sciences Research Council, UK.This is the final published version. It first appeared at http://pubs.acs.org/doi/abs/10.1021/jz502615e

Unravelling a simple method for the low temperature synthesis of silicon nanocrystals and monolithic nanocrystalline thin films

In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H thin films consist of a low volume fraction of silicon nanocrystals embedded in a silicon matrix with medium range order, and they possess this morphology as a significant contribution to their growth comes from the impact on the substrate of silicon clusters and nanocrystals synthesized in the plasma. Quadrupole mass spectrometry, ion flux measurements, and material characterization by transmission electron microscopy (TEM) and atomic force microscopy all provide insight on the contribution to the growth by silicon nanocrystals during PECVD deposition. In particular, cross-section TEM measurements show for the first time that the silicon nanocrystals are uniformly distributed across the thickness of the pm-Si:H film. Moreover, parametric studies indicate that the best pm-Si:H material is obtained at the conditions after the transition between a pristine plasma and one containing nanocrystals, namely a total gas pressure around 2 Torr and a silane to hydrogen ratio between 0.05 to 0.1. From a practical point of view these conditions also correspond to the highest deposition rate achievable for a given RF power and silane flow rate.ope

Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs) embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent

Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

Actually, most of the electric energy is being produced by fossil fuels and great is the search for viable alternatives. The most appealing and promising technology is photovoltaics. It will become truly mainstream when its cost will be comparable to other energy sources. One way is to significantly enhance device efficiencies, for example by increasing the number of band gaps in multijunction solar cells or by favoring charge separation in the devices. This can be done by using cells based on nanostructured semiconductors. In this paper, we will present ab-initio results of the structural, electronic and optical properties of (1) silicon and germanium nanoparticles embedded in wide band gap materials and (2) mixed silicon-germanium nanowires. We show that theory can help in understanding the microscopic processes important for devices performances. In particular, we calculated for embedded Si and Ge nanoparticles the dependence of the absorption threshold on size and oxidation, the role of crystallinity and, in some cases, the recombination rates, and we demonstrated that in the case of mixed nanowires, those with a clear interface between Si and Ge show not only a reduced quantum confinement effect but display also a natural geometrical separation between electron and hole

Combined Experimental and Modeling Analysis for the Development of Optical Materials Suitable to Enhance the Implementation of Plasmonic-Enhanced Luminescent Down-Shifting Solutions on Existing Silicon-Based Photovoltaic Devices

The development of highly efficient solar collectors requires modulating the light interactions with the semiconducting materials. Incorporating luminescent species and metal nanoparticles within a semitransparent polymeric material (e.g., polymethyl methacrylate (PMMA)) leads to the formation of a plasmon-enhanced luminescent down-shifting (PLDS) layer, which offers a retrofittable approach toward expanding the wavelength range over which the conversion process can effectively occur. Adding antireflection coatings (ARCs) further controls the spectral response. However, with each additional component comes additional loss pathways. In this study, the losses related to light interactions with the PMMA and the ARCs have been investigated theoretically using a transfer matrix method and experimentally validated. Two proposed architectures were considered, and the deviations between the optical response of each iteration helped to establish the design considerations. The proposed structure-enhanced (SE) designs generated a predicted enhancement of 37 to 62% for the collection performance of a pristine monocrystalline-silicon solar cell, as inferred through the short-circuit current density (Jsc). The results revealed the synergies among the SE-design components, demonstrating that the spectral response of the SEs, containing a thin polymer framework and an ARC, can be tuned to minimize the reflections, leading to the solar energy conversion enhancement

Spectral conversion for thin film solar cells and luminescent solar concentrators

Full spectrum absorption combined with effective generation and collection of charge carriers is a prerequisite for attaining high efficiency solar cells. Two examples of spectral conversion are treated in this chapter, i.e., up-conversion and down-shifting. Up-conversion is applied to thin film silicon solar cells and efficiency improvements using lanthanides as up-converter material under monochromatic as well as broadband light are presented. Down-shifting is demonstrated in luminescent solar concentrators, and material issues hampering efficiency improvements are discussed, in particular re-absorption of light emitted by luminescent species. A new class of semiconductor hetero-nanocrystals is shown to be an excellent candidate for surpassing the 10% luminescent solar concentrator efficiency barrier

Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells

International audienceno abstrac

Fabrication and optical characterisation of InGaN GaN nanorods

We report the fabrication of densely packed InGaN/GaN nanorods with high hexagonal periodicity. Nanosphere lithography and reactive ion etching were adopted to fabricate the nanorods from planar multiple quantum wells (MQWs). Compared to the planar MQWs, the nanorods exhibit significant luminescence enhancement. This is mostly attributed to the increased radiative recombination and light extraction efficiency. Both photoluminescence and Raman measurements confirmed in-plane strain relaxation in the MQWs after nanofabrication. A reduction in strain-induced quantum confined Stark effect in the nanorods increased radiative recombination. This work is most crucial to the understanding of optical properties with respect to the carrier transport and recombination in InGaN/GaN nanorods.