Electrical conduction mechanism and gas sensing properties of Pd-doped TiO2 films

WOS: 000290006900028Undoped and Pd-doped titanium oxide thin films (0.5 wt.%) were prepared by the sol-gel technique (dip-coating) on glass and silicon substrates. The as-deposited thin films were compacted by subjecting them to different annealing temperatures (300 degrees C, 500 degrees C). The dependences of the electrical conductivity vs. inverse temperature were investigated in air and in vacuum. A study of the effects of Pd-doping, annealing temperature and ambient conditions on their electrical properties was performed. The sensing behavior of titanium oxide thin films exposed to some reducing gases (methane, acetone, ethanol, formaldehyde and liquefied petroleum gas) was carried out, by means of electrical conductivity measurements. All the studied films are most sensitive to formaldehyde, with a special remark for the Pd-doped ones deposited on silicon substrates. (C) 2011 Elsevier B.V. All rights reserved.CNCSISConsiliul National al Cercetarii Stiintifice din Invatamantul Superior (CNCSIS) [PCCE-ID_76]The financial support from the CNCSIS Contract PCCE-ID_76 is acknowledged by D. Mardare