290 research outputs found
Metal Insulator transition at B=0 in p-SiGe
Observations are reported of a metal-insulator transition in a 2D hole gas in
asymmetrically doped strained SiGe quantum wells. The metallic phase, which
appears at low temperatures in these high mobility samples, is characterised by
a resistivity that decreases exponentially with decreasing temperature. This
behaviour, and the duality between resistivity and conductivity on the two
sides of the transition, are very similar to that recently reported for high
mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure
Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
For five different electron and hole systems in two dimensions (Si MOSFET's,
p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, that marks the
onset of strong localization is shown to be a single power-law function of the
scattering rate deduced from the maximum mobility. The resulting curve
defines the boundary separating a localized phase from a phase that exhibits
metallic behavior. The critical density in the limit of infinite
mobility.Comment: 2 pages, 1 figur
Composite fermions close to the one-half filling of the lowest Landau level revisited
By strictly adhering to the microscopic theory of composite fermions for the
Landau-level filling fractions nu_e = p/(2 p + 1), we reproduce, with
remarkable accuracy, the surface-acoustic-wave (SAW)-based experimental results
by Willett and co-workers concerning two-dimensional electron systems with nu_e
close to 1/2. Our results imply that the electron band mass m_b, as distinct
from the composite fermion mass m_*, must undergo a substantial increase under
the conditions corresponding to nu_e approximately equal to 1/2. In view of the
relatively low aerial electronic densities n_e to which the underlying SAW
experiments correspond, our finding conforms with the experimental results by
Shashkin et al. [Phys. Rev. B 66, 073303 (2002)], concerning two-dimensional
electrons in silicon, that signal sharp increase in m_b for n_e decreasing
below approximately 2 x 10^{11} cm^{-2}. We further establish that a finite
mean-free path l_0 is essential for the observed linearity of the longitudinal
conductivity sigma_{xx}(q) as deduced from the SAW velocity shifts.Comment: 5 pages, 2 postscript figure
A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
We argue that there is a new liquid phase in the two-dimensional electron
system in Si MOSFETs at low enough electron densities. The recently observed
metal-insulator transition results as a crossover from the percolation
transition of the liquid phase through the disorder landscape in the system
below the liquid-gas critical temperature. The consequences of our theory are
discussed for variety of physical properties relevant to the recent
experiments.Comment: 12 pages of RevTeX with 3 postscript figure
Possible triplet superconductivity in MOSFETs
A theory that predicts a spin-triplet, even-parity superconducting ground
state in two-dimensional electron systems is re-analyzed in the light of recent
experiments showing a possible insulator-to-conductor transition in such
systems. It is shown that the observations are consistent with such an exotic
superconductivity mechanism, and predictions are made for experiments that
would further corroborate or refute this proposal.Comment: 4 pp., REVTeX, psfig, 1 eps fig, final version as publishe
Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
We report the transport properties of a low disorder two-dimensional hole
system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly
high peak mobility of , with hole density of in the temperature range of
. From their T, p, and electric field dependences, we find that
the metal-insulator transition in zero magnetic field in this exceptionally
clean 2DHS occurs at , which is in good agreement with the
critical for Wigner crystallization , predicted by
Tanatar and Ceperley for an ideally clean 2D system.Comment: 4 pages, 4 Postscript figure
Variation of elastic scattering across a quantum well
The Drude scattering times of electrons in two subbands of a parabolic
quantum well have been studied at constant electron sheet density and different
positions of the electron distribution along the growth direction. The
scattering times obtained by magnetotransport measurements decrease as the
electrons are displaced towards the well edges, although the lowest-subband
density increases. By comparing the measurements with calculations of the
scattering times of a two-subband system, new information on the location of
the relevant scatterers and the anisotropy of intersubband scattering is
obtained. It is found that the scattering time of electrons in the lower
subband depends sensitively on the position of the scatterers, which also
explains the measured dependence of the scattering on the carrier density. The
measurements indicate segregation of scatterers from the substrate side towards
the quantum well during growth.Comment: 4 pages, 4 figure
Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems
The low-temperature conductivity of low-density, high-mobility,
two-dimensional hole systems in GaAs was studied. We explicitly show that the
metal-insulator transition, observed in these systems, is characterized by a
well-defined critical density, p_0c. We also observe that the low-temperature
conductivity of these systems depends linearly on the hole density, over a wide
density range. The high-density linear conductivity extrapolates to zero at a
density close to the critical density.Comment: 4 Figure
Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition
We present a study of the compressibility, K, of a two-dimensional hole
system which exhibits a metal-insulator phase transition at zero magnetic
field. It has been observed that dK/dp changes sign at the critical density for
the metal-insulator transition. Measurements also indicate that the insulating
phase is incompressible for all values of B. Finally, we show how the phase
transition evolves as the magnetic field is varied and construct a phase
diagram in the density-magnetic field plane for this system.Comment: 4 pages, 4 figures, submitted to Physical Review Letters; version 1
is identical to version 2 but didn't compile properl
Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
We calculate within the Boltzmann equation approach the charged impurity
scattering limited low temperature electronic resistivity of low density
-type inversion layers in Si MOSFET structures. We find a rather sharp
quantum to classical crossover in the transport behavior in the K
temperature range, with the low density, low temperature mobility showing a
strikingly strong non-monotonic temperature dependence, which may qualitatively
explain the recently observed anomalously strong temperature dependent
resistivity in low-density, high-mobility MOSFETs.Comment: 5 pages, 2 figures, will appear in PRL (12 July, 1999
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