Deep Traps in AlGaN/GaN Heterostructures Studied by Deep Level Transient Spectroscopy: Effect of Carbon Concentration in GaN Buffer Layers

Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN heterostructure wafers with different concentrations of carbon in the GaN buffer layer, have been investigated by temperature dependent current-voltage and capacitance-voltage measurements and deep level transient spectroscopy (DLTS), using Schottky barrier diodes (SBDs). It is found that (i) SBDs fabricated on the wafers with GaN buffer layers containing a low concentration of carbon (low-[C] SBD) or a high concentration of carbon (high-[C] SBD) have similar low leakage currents even at 500 K; and (ii) the low-[C] SBD exhibits a larger (negative) threshold voltage than the high-[C] SBD. Detailed DLTS measurements on the two SBDs show that (i) different trap species are seen in the two SBDs: electron traps Ax (0.9 eV), A1 (0.99 eV), and A2 (1.2 eV), and a holelike trap H1 (1.24 eV) in the low-[C] SBD; and electron traps A1, A2, and A3 ( ∼ 1.3 eV), and a holelike trap H2 (\u3e1.3 eV) in the high-[C] SBD; (ii) for both SDBs, in the region close to GaN buffer layer, only electron traps can be detected, while in the AlGaN/GaN interface region, significant holelike traps appear; and iii) all of the deep traps show a strong dependence of the DLTS signal on filling pulse width, which indicates they are associated with extended defects, such as threading dislocations. However, the overall density of electron traps is lower in the low-[C] SBD than in the high-[C] SBD. The different traps observed in the two SBDs are thought to be mainly related to differences in microstructure (grain size and threading dislocation density) of GaN buffer layers grown at different pressures

Inheritance of resistance to Sporisorium sorghi in grain sorghum

Greenhouse and field experiments were conducted in 1995, in Kansas, USA, to investigate the inheritance of resistance to covered kernel smut (Sporisorium sorghi) in sorghum cultivars B35-6, SC414 and Sureño. In all crosses, the susceptible parent was BTx623. Crosses were made between resistant and susceptible accessions to determine inheritance. Crosses between resistant accessions were used to determine if they possessed the same genes. Resistant parents remained immune to S. sorghi under both field and greenhouse conditions. The incidence (76%) of smutted panicles of BTx623 grown under greenhouse conditions was substantially higher than that in BTx623 grown in the field (2.3%). The reactions of F1 progenies of the crosses B35-6 × Sureño and Sureño × BTx623 suggest incomplete dominance of resistance. There was a very limited amount of F1 seed from the other resistant × susceptible crosses and therefore no conclusion could be reached on the reactions of their progenies to S. sorghi. A 3:1 ratio of resistant to susceptible plants was obtained in the F2 population of Sureño × BTx623, suggesting incomplete dominance. Higher smut incidence in the F1 progeny of Sureño × BTx623 was observed, indicating incomplete dominance of resistance from Sureno

Bostonia: The Boston University Alumni Magazine. Volume 9

Founded in 1900, Bostonia magazine is Boston University's main alumni publication, which covers alumni and student life, as well as university activities, events, and programs

Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors

The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30–65 nm and 5 μm in length) ZnO-based metal–semiconductor–metal photoconductor device in order to study the origin of persistent photoconductivity. The current–voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state

Absence of N addition facilitates B cell development, but impairs immune responses

The programmed, stepwise acquisition of immunocompetence that marks the development of the fetal immune response proceeds during a period when both T cell receptor and immunoglobulin (Ig) repertoires exhibit reduced junctional diversity due to physiologic terminal deoxynucleotidyl transferase (TdT) insufficiency. To test the effect of N addition on humoral responses, we transplanted bone marrow from TdT-deficient (TdT−/−) and wild-type (TdT+/+) BALB/c mice into recombination activation gene 1-deficient BALB/c hosts. Mice transplanted with TdT−/− cells exhibited diminished humoral responses to the T-independent antigens α-1-dextran and (2,4,6-trinitrophenyl) hapten conjugated to AminoEthylCarboxymethyl-FICOLL, to the T-dependent antigens NP19CGG and hen egg lysozyme, and to Enterobacter cloacae, a commensal bacteria that can become an opportunistic pathogen in immature and immunocompromised hosts. An exception to this pattern of reduction was the T-independent anti-phosphorylcholine response to Streptococcus pneumoniae, which is normally dominated by the N-deficient T15 idiotype. Most of the humoral immune responses in the recipients of TdT−/− bone marrow were impaired, yet population of the blood with B and T cells occurred more rapidly. To further test the effect of N-deficiency on B cell and T cell population growth, transplanted TdT-sufficient and -deficient BALB/c IgMa and congenic TdT-sufficient CB17 IgMb bone marrow were placed in competition. TdT−/− cells demonstrated an advantage in populating the bone marrow, the spleen, and the peritoneal cavity. TdT deficiency, which characterizes fetal lymphocytes, thus appears to facilitate filling both central and peripheral lymphoid compartments, but at the cost of altered responses to a broad set of antigens