272 research outputs found

    Bias and temperature dependence of the noise in a single electron transistor

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    A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range 1...300 Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i. e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.Comment: 16 pages, 9 figures (EPS

    Pseudo-gap features of intrinsic tunneling in (HgBr_2)-Bi2212 single crystals

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    The c-axis tunneling properties of both pristine Bi2212 and its HgBr2_2 intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c\it c-axis direction have been observed. The dynamic conductance dI/I/dV(V)V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the {\it c}-axis resistance does not change after the intercalation suggesting that a coupling between CuO2\rm CuO_2-bilayers has little effect on the pseudogap.Comment: 6 pages, 5 figures; presented at the Second Int Conf. New3Sc-1999 (Las Vegas, NV

    Two-dimensional arrays of low capacitance tunnel junctions: general properties, phase transitions and Hall effect

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    We describe transport properties of two-dimensional arrays of low capacitance tunnel junctions, such as the current voltage characteristic and its dependence on external magnetic field and temperature. We discuss several experiments in which the small capacitance of the junctions plays an important role. In arrays where the junctions have a relatively large charging energy, (i.e. when they have a low capacitance) and a high normal state resistance, the low bias resistance increases with decreasing temperature and eventually at very low temperature the array becomes insulating even though the electrodes in the array are superconducting. This transition to the insulating state can be described by thermal activation. In an intermediate region where the junction resistance is of the order of the quantum resistance and the charging energy is of the order of the Josephson coupling energy, the arrays can be tuned between a superconducting and an insulating state with a magnetic field. We describe measurements of this magnetic-field-tuned superconductor insulator transition, and we show that the resistance data can be scaled over several orders of magnitude. Four arrays follow the same universal function. At the transition the transverse (Hall) resistance is found to be very small in comparison with the longitudinal resistance. However, for magnetic field values larger than the critical value.we observe a substantial Hall resistance. The Hall resistance of these arrays oscillates with the applied magnetic field. features in the magnetic field dependence of the Hall resistance can qualitatively be correlated to features in the derivative of the longitudinal resistance, similar to what is found in the quantum Hall effect.Comment: 29 pages, 16 eps figures, uses aipproc.sty and epsfig.sty, contribution to Euroschool on "Superconductivity in Networks and Mesoscopic Systems", held in Siena, Italy (8-20 september 1997

    Gain Dependence of the Noise in the Single Electron Transistor

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    An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.Comment: 10 pages, LaTex 2.09, 4 figures (epsfig

    Predicting project performance using pre-construction performance indicators - A case study evaluation

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    Predicting the outcome of a construction project largely relies on estimated targets of time and cost. Still, hitting the targets does not mean that the project is a success on all performance levels. Here, a retrospective case study was undertaken on a construction project identified as a successful project by the partners involved. The purpose of the study was to validate conceptual design indicators of a high-performance construction project as reported in the literature, by answering the following research questions: "What characterizes the dialogue between the different disciplines; (2) What is the dialogue about; and (3) When in the process do questions arise?" Findings indicate that the interprofessional dialogue within the project team was well established. The paper introduces a discussion that the dialogue benefited from the collaborative project environment as well as the early design intent. Further, the study also suggests that the interprofessional dialogue supported a sound project team development

    Giant lasing effect in magnetic nanoconductors

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    We propose a new principle for a compact solid-state laser in the 1-100 THz regime. This is a frequency range where attempts to fabricate small size lasers up till now have met severe technical problems. The proposed laser is based on a new mechanism for creating spin-flip processes in ferromagnetic conductors. The mechanism is due to the interaction of light with conduction electrons; the interaction strength, being proportional to the large exchange energy, exceeds the Zeeman interaction by orders of magnitude. On the basis of this interaction, a giant lasing effect is predicted in a system where a population inversion has been created by tunneling injection of spin-polarized electrons from one ferromagnetic conductor to another -- the magnetization of the two ferromagnets having different orientations. Using experimental data for ferromagnetic manganese perovskites with nearly 100% spin polarization we show the laser frequency to be in the range 1-100 THz. The optical gain is estimated to be of order 10^7 cm^{-1}, which exceeds the gain of conventional semiconductor lasers by 3 or 4 orders of magnitude. A relevant experimental study is proposed and discussed.Comment: 4 pages, 3 figure

    Superconductivity in an Einstein Solid AxV2Al20 (A = Al and Ga)

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    A cage compound AxV2Al20 (Al10V), that was called an Einstein solid by Caplin and coworkers 40 years ago, is revisited to investigate the low-energy, local vibrations of the A atoms and their influence on the electronic and superconducting properties of the compound. Polycrystalline samples with A = Al, Ga, Y, and La are studied through resistivity and heat capacity measurements. Weak-coupling BCS superconductivity is observed below Tc = 1.49, 1.66, and 0.69 K for Ax = Al0.3, Ga0.2, and Y, respectively, but not above 0.4 K for Ax = La. Low-energy modes are detected only for A = Al and Ga, which are approximately described by the Einstein model with Einstein temperatures of 24 and 8 K, respectively. A weak but significant coupling between the low-energy modes, which are almost identical to those called rattling in recent study, and conduction electrons manifests itself as anomalous enhancement in resistivity at around low temperatures corresponding to the Einstein temperatures.Comment: 12 pages, 5 figures, to be published in J. Phys. Soc. Jp
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