4 research outputs found
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
Full text linkThe thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
out using the 3ω method
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
Full text linkThe thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
out using the 3ω method
