Microwave field effect transistor

Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate, and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes extablish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad

On Berry--Esseen bounds for non-instantaneous filters of linear processes

Let $X_n=\sum_{i=1}^{\infty}a_i\epsilon_{n-i}$, where the $\epsilon_i$ are i.i.d. with mean 0 and at least finite second moment, and the $a_i$ are assumed to satisfy $|a_i|=O(i^{-\beta})$ with $\beta >1/2$. When $1/2<\beta<1$, $X_n$ is usually called a long-range dependent or long-memory process. For a certain class of Borel functions $K(x_1,...,x_{d+1})$, $d\ge0$, from ${\mathcal{R}}^{d+1}$ to $\mathcal{R}$, which includes indicator functions and polynomials, the stationary sequence $K(X_n,X_{n+1},...,X_{n+d})$ is considered. By developing a finite orthogonal expansion of $K(X_n,...,X_{n+d})$, the Berry--Esseen type bounds for the normalized sum $Q_N/\sqrt{N},Q_N=\sum_{n=1}^N(K(X_ n,...,X_{n+d})-\mathrm{E}K(X_n,...,X_{n+d}))$ are obtained when $Q_N/\sqrt{N}$ obeys the central limit theorem with positive limiting variance.Comment: Published in at http://dx.doi.org/10.3150/07-BEJ112 the Bernoulli (http://isi.cbs.nl/bernoulli/) by the International Statistical Institute/Bernoulli Society (http://isi.cbs.nl/BS/bshome.htm

Conduction in thin InSb films

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