van der Waals integration of GaN light-emitting diode arrays on foreign graphene films using semiconductor/graphene heterostructures

We report the van der Waals integration of micropatterned GaN light-emitting diodes (LEDs) onto foreign graphene films. GaN micro-LEDs were selectively grown on a graphene substrate using a patterned SiO2 mask, and then the whole device structure was laterally fixed by a polyimide insulator to form a united layer. After device fabrication, the LED/graphene heterostructure device was piled on the foreign graphene layers using a typical wet transfer technique of 2D crystals where the bottom graphene layer of the heterostructure was adhered to the foreign graphene only by van der Waals interactions. The transferred micro-LEDs showed well-aligned crystallographic orientations as well as reliable device performances, including strong light emissions, good rectifying behaviors of the current density???voltage curve, and good simultaneity between the electroluminescence intensity and the applied currents, ensuring reliable electrical connections and mechanical adhesions of the light-emitting layer to the foreign graphene films. Furthermore, the reliable adhesiveness allowed us to achieve device wearability, while the LEDs exhibited homogeneous light emissions under various bending conditions because of negligible external stress in the discrete micro-LEDs

Intracellular gallium nitride microrod laser

We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these microrods for cell labeling. GaN microrods were grown on graphene-coated SiO2/Si substrates by metal-organic vapor phase epitaxy. The GaN microrods are easily detached from the substrates because of the weakness of the van der Waals forces between GaN and graphene. The uptake of microrods into HeLa cells via endocytosis and viability after uptake were investigated. Normal cellular activities, including migration and division, were observed over 2 weeks in culture. Furthermore, the photoluminescence spectra of the internalized microrods exhibited sharp laser emission peaks with a low lasing threshold of 270kW/cm(2)

High sensitivity bolometers based on metal nanoantenna dimers with a nanogap filled with vanadium dioxide

One critical factor for bolometer sensitivity is efficient electromagnetic heating of thermistor materials, which plasmonic nanogap structures can provide through the electric field enhancement. In this report, using finite element method simulation, electromagnetic heating of nanorod dimer antennas with a nanogap filled with vanadium dioxide (VO2) was studied for long-wavelength infrared detection. Because VO2 is a thermistor material, the electrical resistance between the two dimer ends depends on the dimer's temperature. The simulation results show that, due to the high heating ability of the nanogap, the temperature rise is several times higher than expected from the areal coverage. This excellent performance is observed over various nanorod lengths and gap widths, ensuring wavelength tunability and ultrafast operating speed, thereby making the dimer structures a promising candidate for high sensitivity bolometers