4,612 research outputs found

    The Neutrino Magnetic Moment Induced by Leptoquarks

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    Allowing leptoquarks to interact with both right-handed and left-handed neutrinos (i.e., ``non-chiral'' leptoquarks), we show that a non-zero neutrino magnetic moment can arise naturally. Although the mass of the non-chiral vector leptoquark that couples to the first generation fermions is constrained severely by universality of the π+\pi^+ leptonic decays and is found to be greater than 50 TeV, the masses of the second and third generation non-chiral vector leptoquarks may evade such constraint and may in general be in the range of 11001\sim 100 TeV. With reasonable input mass and coupling values, we find that the neutrino magnetic moment due to the second generation leptoquarks is of the order of 10121016μB10^{-12}\sim 10^{-16} \mu_{\rm B} while that caused by the third generation leptoquarks, being enhanced significantly by the large top quark mass, is in the range of 10101014μB10^{-10}\sim 10^{-14} \mu_{\rm B}.Comment: 11 pages, 3 eps figures, uses revte

    The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor

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    In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO2_2 thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.Comment: 28 pages, 14 figures, Accepted as a regular paper - the Proceedings of Royal Society

    Imaging Oxygen Defects and their Motion at a Manganite Surface

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    Manganites are technologically important materials, used widely as solid oxide fuel cell cathodes: they have also been shown to exhibit electroresistance. Oxygen bulk diffusion and surface exchange processes are critical for catalytic action, and numerous studies of manganites have linked electroresistance to electrochemical oxygen migration. Direct imaging of individual oxygen defects is needed to underpin understanding of these important processes. It is not currently possible to collect the required images in the bulk, but scanning tunnelling microscopy could provide such data for surfaces. Here we show the first atomic resolution images of oxygen defects at a manganite surface. Our experiments also reveal defect dynamics, including oxygen adatom migration, vacancy-adatom recombination and adatom bistability. Beyond providing an experimental basis for testing models describing the microscopics of oxygen migration at transition metal oxide interfaces, our work resolves the long-standing puzzle of why scanning tunnelling microscopy is more challenging for layered manganites than for cuprates.Comment: 7 figure

    Implications of Recent Bˉ0D()0X0\bar{B}^0\to D^{(*)0}X^0 Measurements

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    The recent measurements of the color-suppressed modes Bˉ0D()0π0\bar B^0\to D^{(*)0}\pi^0 imply non-vanishing relative final-state interaction (FSI) phases among various BˉDπ\bar B\to D\pi decay amplitudes. Depending on whether or not FSIs are implemented in the topological quark-diagram amplitudes, two solutions for the parameters a1a_1 and a2a_2 are extracted from data using various form-factor models. It is found that a2a_2 is not universal: a2(Dπ)=0.400.55|a_2(D\pi)|= 0.40-0.55 and a2(Dπ)=0.250.35|a_2(D^*\pi)|= 0.25-0.35 with a relative phase of order (5055)(50-55)^\circ between a1a_1 and a2a_2. If FSIs are not included in quark-diagram amplitudes from the outset, a2eff/a1effa_2^{eff}/a_1^{eff} and a2effa_2^{eff} will become smaller. The large value of a2(Dπ)|a_2(D\pi)| compared to a2eff(Dπ)|a_2^{eff}(D\pi)| or naive expectation implies the importance of long-distance FSI contributions to color-suppressed internal WW-emission via final-state rescatterings of the color-allowed tree amplitude.Comment: 17 pages. The Introduction is substantially revised and the order of the presentation in Sec. 2 is rearranged. To appear in Phys. Re

    Comparisons between different approximations to energy dissipation rate in a self-preserving far wake

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    Author name used in this publication: Y. Zhou2006-2007 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

    Puzzles in BB physics

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    I discuss some puzzles observed in exclusive BB meson decays, concentrating on the large difference between the direct CP asymmetries in the B0πK±B^0\to \pi^\mp K^\pm and B±π0K±B^\pm\to \pi^0 K^\pm modes, the large B0π0π0B^0\to\pi^0\pi^0 branching ratio, and the large deviation of the mixing-induced CP asymmetries in the bsqqˉb\to sq\bar q penguins from those in the bccˉsb\to c\bar c s trees.Comment: 6 pages, 1 figure, talk presented at the 9th Workshop on High Energy Physics Phenomenology, Bhubaneswar, Orissa, India, Jan. 3-14, 2006; reference adde

    Chaotic memristor

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    We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincar\'{e} plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.Comment: Applied Physics A (in press

    Metallic nanoparticles and nanostructures for bio-applications

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    This paper elaborates on approaches of synthesis of Au and Ag nanoparticles (NPs), deposition of colloid onto glass substrate and encapsulation of NPs with silicon dioxide (SiO2) thin shell. As one important bio application of metallic nanoparticles, both solution-based and substrate-based fluorescence enhancement tests are demonstrated
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