Optically pumped planar waveguide lasers, part I: fundamentals and fabrication techniques

The tremendous interest in the field of waveguide lasers in the past two decades is largely attributed to the geometry of the gain medium, which provides the possibility to store optical energy on a very small dimension in the form of an optical mode. This allows for realization of sources with enhanced optical gain, low lasing threshold, and small footprint and opens up exciting possibilities in the area of integrated optics by facilitating their on-chip integration with different functionalities and highly compact photonic circuits. Moreover, this geometrical concept is compatible with high-power diode pumping schemes as it provides exceptional thermal management, minimizing the impact of thermal loading on laser performance. The proliferation of techniques for fabrication and processing capable of producing high optical quality waveguides has greatly contributed to the growth of waveguide lasers from a topic of fundamental research to an area that encompasses a variety of practical applications. In this first part of the review on optically pumped waveguide lasers the properties that distinguish these sources from other classes of lasers will be discussed. Furthermore, the current state-of-the art in terms of fabrication tools used for producing waveguide lasers is reviewed from the aspects of the processes and the materials involved

Nano-droplets deposited in microarrays by femtosecond Ti:sapphire laser-induced forward transfer

The authors present the deposition of nanoscale droplets of Cr using femtosecond Ti:Sapphire Laser-Induced Forward Transfer. Deposits around 300 nm in diameter, significantly smaller than any previously reported, are obtained from a 30 nm thick source film. Deposit size, morphology, and adhesion to a receiver substrate as functions of applied laser fluence are investigated. We show that deposits can be obtained from previously irradiated areas of the source material film with negligible loss of deposition quality, allowing sub-spot size period microarrays to be produced without the need to move the source film

Pulsed laser deposition for growth of high quality epitaxial garnet films for low threshold waveguide lasers

Pulsed laser deposition (PLD) is a mature technique capable of producing extremely high quality epitaxial single crystalline films. We have grown Nd:doped garnet films of GGG (Gd The talk will summarise our progress using conventional (single beam) PLD in thin-film and waveguide growth, using both nanosecond and femtosecond lasers, and also introduce our new directions in tri-beam PLD (three targets, three lasers) for growth of some interesting, complex and perhaps impossible structures, such as Gaussian doping, internal voids and even helically doped structures

Single-mode tunable laser emission in the single-exciton regime from colloidal nanocrystals

Whispering-gallery-mode resonators have been extensively used in conjunction with different materials for the development of a variety of photonic devices. Among the latter, hybrid structures, consisting of dielectric microspheres and colloidal core/shell semiconductor nanocrystals as gain media, have attracted interest for the development of microlasers and studies of cavity quantum electrodynamic effects. Here we demonstrate single-exciton, single-mode, spectrally tuned lasing from ensembles of optical antenna-designed, colloidal core/shell CdSe/CdS quantum rods deposited on silica microspheres. We obtain single-exciton emission by capitalizing on the band structure of the specific core/shell architecture that strongly localizes holes in the core, and the two-dimensional quantum confinement of electrons across the elongated shell. This creates a type-II conduction band alignment driven by coulombic repulsion that eliminates non-radiative multi-exciton Auger recombination processes, thereby inducing a large exciton–bi-exciton energy shift. Their ultra-low thresholds and single-mode, single-exciton emission make these hybrid lasers appealing for various applications, including quantum information processing

Screening of the DNA mismatch repair genes MLH1, MSH2 and MSH6 in a Greek cohort of Lynch syndrome suspected families

<p>Abstract</p> <p>Background</p> <p>Germline mutations in the DNA mismatch repair genes predispose to Lynch syndrome, thus conferring a high relative risk of colorectal and endometrial cancer. The <it>MLH1, MSH2 </it>and <it>MSH6 </it>mutational spectrum reported so far involves minor alterations scattered throughout their coding regions as well as large genomic rearrangements. Therefore, a combination of complete sequencing and a specialized technique for the detection of genomic rearrangements should be conducted during a proper DNA-testing procedure. Our main goal was to successfully identify Lynch syndrome families and determine the spectrum of <it>MLH1</it>, <it>MSH2 </it>and <it>MSH6 </it>mutations in Greek Lynch families in order to develop an efficient screening protocol for the Greek colorectal cancer patients' cohort.</p> <p>Methods</p> <p>Forty-two samples from twenty-four families, out of which twenty two of Greek, one of Cypriot and one of Serbian origin, were screened for the presence of germline mutations in the major mismatch repair genes through direct sequencing and MLPA. Families were selected upon Amsterdam criteria or revised Bethesda guidelines.</p> <p>Results</p> <p>Ten deleterious alterations were detected in twelve out of the twenty-four families subjected to genetic testing, thus our detection rate is 50%. Four of the pathogenic point mutations, namely two nonsense, one missense and one splice site change, are novel, whereas the detected genomic deletion encompassing exon 6 of the <it>MLH1 </it>gene has been described repeatedly in the LOVD database. The average age of onset for the development of both colorectal and endometrial cancer among mutation positive families is 43.2 years.</p> <p>Conclusion</p> <p>The mutational spectrum of the MMR genes investigated as it has been shaped by our analysis is quite heterogeneous without any strong indication for the presence of a founder effect.</p

Femtosecond laser-induced forward transfer (LIFT): a technique for versatile micro-printing applications

The Laser-Induced Forward Transfer (LIFT) method exists as a relatively simple and versatile additive surface micropatterning technology. Material is transferred from a supported thin film to a receiver substrate by irradiating the rear side of the film with a single laser pulse. Typically transfer is effected either through melting through of the source film or by ablation of the film at a constrained interface with a resultant pressure build-up propelling a piece of the film to the receiver. Both of these processes have inherent advantages and disadvantages; by melting the source film during transfer, sub-laser spot size features can be produced, but the choice of available materials is reduced and control of deposit morphology is limited. Ablation-driven transfer is less material selective but resultant deposits are typically broken during transfer and scattered over relatively large areas

Tunable, continuous-wave Ti:sapphire channel waveguide lasers written by femtosecond and picosecond laser pulses

Fabrication and cw lasing at 798.25 nm is reported for femtosecond (fs) and picosecond (ps) laser-inscribed channel waveguides in Ti:sapphire crystals. Lasing in channels written by fs (ps) pulses was obtained above a threshold of 84 mW (189 mW) with a maximum output power and a slope efficiency of 143 mW (45 mW) and 23.5% (7.1%), respectively. The emission wavelength was tuned over a 170 nm range by using a birefringent filter in an external cavity