Atomic hydrogen cleaning of GaSb(001) surfaces

We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (1 × 3) reconstruction after a total H2 dose of approximately 150 kL. An ordered but partially oxidized surface is generated during cleaning, and the removal of this residual oxide is the most difficult part of the process. Auger electron spectroscopy and low energy electron diffraction were used to monitor the chemical cleanliness and the ordering of the surface during the cleaning process, whereas high resolution electron energy loss spectroscopy was used to probe the electronic structure in the near-surface region. The results obtained indicates that this cleaning procedure leaves no residual electronic damage in the near-surface region of the Te-doped (n ~ 5 × 1017 cm – 3) samples of GaSb(001) studied

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process

Accumulation layer profiles at InAs polar surfaces

High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile calculations have been used to study the accumulation layer and surface plasmon excitations at the In-terminated (001)-(4 × 1) and (111)A-(2 × 2) surfaces of InAs. For the (001) surface, the surface state density is 4.0 ± 2.0 × 1011 cm – 2, while for the (111)A surface it is 7.5 ± 2.0 × 1011 cm – 2, these values being independent of the surface preparation procedure, bulk doping level, and substrate temperature. Changes of the bulk Fermi level with temperature and bulk doping level do, however, alter the position of the surface Fermi level. Ion bombardment and annealing of the surface affect the accumulation layer only through changes in the effective bulk doping level and the bulk momentum scattering rate, with no discernible changes in the surface charge density

Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1 – xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1 – xGex (x ~ 0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry

A systematic review of population based epidemiological studies in Myasthenia Gravis

<p>Abstract</p> <p>Background</p> <p>The aim was to collate all myasthenia gravis (MG) epidemiological studies including AChR MG and MuSK MG specific studies. To synthesize data on incidence rate (IR), prevalence rate (PR) and mortality rate (MR) of the condition and investigate the influence of environmental and technical factors on any trends or variation observed.</p> <p>Methods</p> <p>Studies were identified using multiple sources and meta-analysis performed to calculate pooled estimates for IR, PR and MR.</p> <p>Results</p> <p>55 studies performed between 1950 and 2007 were included, representing 1.7 billion population-years. For All MG estimated pooled IR (eIR): 5.3 per million person-years (C.I.:4.4, 6.1), range: 1.7 to 21.3; estimated pooled PR: 77.7 per million persons (C.I.:64.0, 94.3), range 15 to 179; MR range 0.1 to 0.9 per millions person-years. AChR MG eIR: 7.3 (C.I.:5.5, 7.8), range: 4.3 to 18.0; MuSK MG IR range: 0.1 to 0.32. However marked variation persisted between populations studied with similar methodology and in similar areas.</p> <p>Conclusions</p> <p>We report marked variation in observed frequencies of MG. We show evidence of increasing frequency of MG with year of study and improved study quality. This probably reflects improved case ascertainment. But other factors must also influence disease onset resulting in the observed variation in IR across geographically and genetically similar populations.</p

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra

Effects of zinc supplementation on cognitive function in healthy middle-aged and older adults: the ZENITH study

A randomised double-blind placebo-controlled design was employed to investigate the effects of Zn supplementation on cognitive function in 387 healthy adults aged 55–87 years. Several measures of visual memory, working memory, attention and reaction time were obtained using the Cambridge Automated Neuropsychological Test Battery at baseline and then after 3 and 6 months of 0 (placebo), 15 or 30 mg Zn/d. Younger adults (70 years), and performance improved with practice on some measures. For two out of eight dependent variables, there were significant interactions indicating a beneficial effect (at 3 months only) of both 15 and 30 mg/d on one measure of spatial working memory and a detrimental effect of 15 mg/d on one measure of attention. Further work is required to establish whether these findings generalise to older adults in poorer mental and physical health and with less adequate Zn intake and status than the present sample

Propagation of Ultrasonic Waves in Liquid Mixtures and Intermolecular Forces II

The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are investigated using x-ray photoemission spectroscopy and high-resolution electron energy loss spectroscopy. The clean surfaces exhibit upward band bending (electron depletion) consistent with the charge neutrality level in InSb lying at the valence band maximum. The surface Fermi level to valence band maximum separation is increased for the S terminated compared with the clean surface, leading to flat bands and downward band bending (electron accumulation) for the (001) and (111) B surfaces, respectively. This is discussed in terms of compensation of native acceptor surface states. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000567