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15 research outputs found

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Author: Franz A. M. Koeck
Maitreya Dutta
Raghuraj Hathwar
Robert J. Nemanich
Srabanti Chowdhury
Stephen M. Goodnick
Publication venue: 'AIP Publishing'
Publication date
Field of study

Compound Semiconductors

Author: Chowdhury Srabanti
Mi Zetian
Xing Grace
Publication venue: Wiley Periodicals, Inc.
Publication date: 01/04/2023
Field of study

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/176316/1/pssa202300223_am.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/176316/2/pssa202300223.pd

Deep Blue at the University of Michigan

Thermal management in GaN-devices for increased power density

Author: Chowdhury Srabanti
Kuball Martin
Malakoutian Mohamadali
Zheng Xiang
Publication venue
Publication date: 01/01/2023
Field of study

Explore Bristol Research

Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET

Author: Dong Ji
Jianyi Gao
Srabanti Chowdhury
Yuanzheng Yue
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
Field of study

880 V/<inline-formula> <tex-math notation="LaTeX"> $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ </tex-math> </inline-formula> MIS Gate Trench CAVET on Bulk GaN Substrates

Author: Anchal Agarwal
Dong Ji
Haoran Li
Srabanti Chowdhury
Stacia Keller
Wenwen Li
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
Field of study

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Author: Chowdhury Srabanti
Field Daniel E
Graham Samuel
Hines Nicholas J.
Kuball Martin
Malakoutian Mohamadali
Pasayat Shubhra
Publication venue
Publication date: 07/12/2021
Field of study

Explore Bristol Research

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Author: Anchal Agarwal
Dong Ji
Matthew A. Laurent
Saptarshi Mandal
Srabanti Chowdhury
Stacia Keller
Wenwen Li
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
Field of study

A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor

Author: Burcu Ercan
Haoran Li
Matthew A. Laurent
Saba Rajabi
Saptarshi Mandal
Srabanti Chowdhury
Stacia Keller
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
Field of study

On the Progress Made in GaN Vertical Device Technology

Author: Ben-Yaacov I.
Dong Ji
Ji D.
Ji D.
Maeda T.
Oka T.
Oka T.
Shibata D.
Srabanti Chowdhury
Publication venue: 'World Scientific Pub Co Pte Lt'
Publication date
Field of study

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