New negative differential resistance device based on resonant interband tunneling

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices

We present evidence that the critical thickness for the appearance of misfit defects in a given material and heteroepitaxial structure is not simply a function of lattice mismatch. We report substantial differences in the relaxation of mismatch stress in Ge_(0.5)Si_(0.5)/Si superlattices grown at different temperatures on (100) Si substrates. Samples have been analyzed by x‐ray diffraction, channeled Rutherford backscattering, and transmission electron microscopy. While a superlattice grown at 365 °C demonstrates a high degree of elastic strain, with a dislocation density <10^5 cm^(−2) , structures grown at higher temperatures show increasing numbers of structural defects, with densities reaching 2×10^(10) cm^(−2) at a growth temperature of 530 °C. Our results suggest that it is possible to freeze a lattice‐mismatched structure in a highly strained metastable state. Thus it is not surprising that experimentally observed critical thicknesses are rarely in agreement with those predicted by equilibrium theories

Type II superlattices for infrared detectors and devices

Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds. Specifically, it has been demonstrated that both InSb/InAsxSb1-x superlattices and Ga1-xInxSb/InAs superlattices can possess energy gaps in the 8-14 mu m range. The efforts have focused on the Ga1-xInxSb/InAs system because of its extreme broken gap band alignment, which results in narrow energy gaps for very short superlattice periods. The authors report the use of in situ chemical doping of Ga1-xInxSb/InAs superlattices to fabricate p-n photodiodes. These diodes display a clear photovoltaic response with a threshold near 12 mu m. They have also attained outstanding structural quality in Ga1-xInxSb/InAs superlattices grown on radiatively heated GaSb substrates. Cross-sectional transmission electron microscope images of these superlattices display no dislocations, while high resolution X-ray diffraction scans reveal sharp high-order superlattice satellites and strong Pendellosung fringes

Single-charge rotating black holes in four-dimensional gauged supergravity

We consider four-dimensional U(1)^4 gauged supergravity, and obtain asymptotically AdS_4, non-extremal, charged, rotating black holes with one non-zero U(1) charge. The thermodynamic quantities are computed. We obtain a generalization that includes a NUT parameter. The general solution has a discrete symmetry involving inversion of the rotation parameter, and has a string frame metric that admits a rank-2 Killing-Stackel tensor.Comment: 9 page

Deterministic Brownian motion generated from differential delay equations

This paper addresses the question of how Brownian-like motion can arise from the solution of a deterministic differential delay equation. To study this we analytically study the bifurcation properties of an apparently simple differential delay equation and then numerically investigate the probabilistic properties of chaotic solutions of the same equation. Our results show that solutions of the deterministic equation with randomly selected initial conditions display a Gaussian-like density for long time, but the densities are supported on an interval of finite measure. Using these chaotic solutions as velocities, we are able to produce Brownian-like motions, which show statistical properties akin to those of a classical Brownian motion over both short and long time scales. Several conjectures are formulated for the probabilistic properties of the solution of the differential delay equation. Numerical studies suggest that these conjectures could be "universal" for similar types of "chaotic" dynamics, but we have been unable to prove this.Comment: 15 pages, 13 figure

Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe

We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of two-dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high-purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ~ 1–2 Å) indicative of uniform high quality growth. Secondary-ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III-V buffer layers

Correlations, fluctuations and stability of a finite-size network of coupled oscillators

The incoherent state of the Kuramoto model of coupled oscillators exhibits marginal modes in mean field theory. We demonstrate that corrections due to finite size effects render these modes stable in the subcritical case, i.e. when the population is not synchronous. This demonstration is facilitated by the construction of a non-equilibrium statistical field theoretic formulation of a generic model of coupled oscillators. This theory is consistent with previous results. In the all-to-all case, the fluctuations in this theory are due completely to finite size corrections, which can be calculated in an expansion in 1/N, where N is the number of oscillators. The N -> infinity limit of this theory is what is traditionally called mean field theory for the Kuramoto model.Comment: 25 pages (2 column), 12 figures, modifications for resubmissio