Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices

We have used reflection high‐energy electron diffraction to study the surface periodicity of the growth front of InAs/GaInSb strained‐layer superlattices (SLSs). We found that the apparent surface lattice spacing reproducibly changed during layers which subsequent x‐ray measurements indicated were coherently strained. Abrupt changes in the measured streak spacings were found to be correlated to changes in the growth flux. The profile of the dynamic streak spacing was found to be reproducible when comparing consecutive periods of a SLSs or different SLSs employing the same shuttering scheme at the InAs/GaInSb interface. Finally, when the interface shuttering scheme was changed, it was found that the dynamic streak separation profile also changed. Large changes in the shuttering scheme led to dramatic differences in the streak separation profile, and small changes in the shuttering scheme led to minor changes in the profile. In both cases, the differences in the surface periodicity profile occurred during the parts of the growth where the incident fluxes differed

New negative differential resistance device based on resonant interband tunneling

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 Å (≈12 ps) to 34 Å(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes

Agent swarm classification network ASCN

In this paper we introduced a newly RBF Classification Network - "Agent Swarm Classification Network ASCN", which is trained by a Multi-agent systems (MAS) approach. MAS can be regarded as a swarm of independent software agents interact with each other to achieve common goals, complete concurrent distributed tasks under autonomous control. By treating each neuron as an agent, the weights of neurons can be determined through a set of pre-defined simple agent behavior. Three sets of experiments are examined to observe the effectiveness of the proposed method. © 2004 IEEE.published_or_final_versio

Response knowledge learning of autonomous agent

In robot applications, the performance of a robot agent is measured by the quantity of award received from its response. Many literatures [1-5] define the response as either a state diagram or a neural network. Due to the absence of a desired response, neither of them is applicable to an unstructural environment. In this paper, a novel Response Knowledge Learning algorithm is proposed to handle this domain. By using a set of experiences, the algorithm can extract the contributed experiences to construct the response function. Two sets of environments are provided to illustrate the performance of the proposed algorithm. The results show that it can effectively construct the response function that receives an award which is very close to the true maximum.published_or_final_versio

Image enlargement as an edge estimation

A robust image enlargement algorithm is presented in this paper. We formulate the image enlargement process as an edge information estimation process. In order to achieve a higher resolution, we first perform Pixel Duplication on the target image to form an initial high resolution image. Then the edge details of the enlarged image are estimated by using a novel neural network called "Agent Swarm Regression Network ASRN", which is trained by a set of low resolution (LR) / high resolution (HR) image patch pairs. Two benchmark images were used to verify the performance of the proposed algorithm. The results show that the enlarged images by the proposed algorithm are sharper than those by the conventional methods.published_or_final_versio