Theoretical Investigation on the Effect of multinary Isoelectronic Substitution on TiCoSb based half-Heusler alloys

To understand the effect of isoelectronic substitution on thermoelectric properties of TiCoSb based half - Heusler (HH) alloys, we have systematically studied the transport properties with substitution of Zr at Ti and Bi at Sb sites. The electronic structure of TixZr1-xCoSbxBi1-x (x = 0.25, 0.5, 0.75) and parent TiCoSb are investigated using the full potential linearized augmented plane wave method and the thermoelectric transport properties are calculated on the basis of semiclassical Boltzmann transport theory. The band analysis of the calculated band structures reveal that TixZr1-xCoSbxBi1-x has semiconducting behavior with indirect band gap at x = 0.25, 0.5 concentration and direct band gap behavior at x = 0.75 concentration. The TixZr1-xCoSbxBi1-x (x = 0.25, 0.5, 0.75) compounds show smaller band gap values as compared to the pure TiCoSb. The d electrons of Ti/Zr and Co dominate the electronic transport properties of TixZr1-xCoSbxBi1-x system. All these systems follow the empirical rule of 18 valence-electron content to bring semiconductivity in HH alloys. The isoelectronic substitution in TiCoSb can tune the band structure by shifting the Fermi level. This provides us lot of possibilities to get the desired band gap values for designing thermoelectrics with high efficiency. In this study we have showed that the isoelectronic substitution at both Ti and Sb site of TiCoSb has very small effect for increasing the ZT values and one should go for isoelectronic substitution at any one sites of TiCoSb HH alloys alone to improve ZT

Search for Thermoelectrics with High Figure of Merit in half-Heusler compounds with multinary substitution

In order to improve the thermoelectric performance of TiCoSb we have substituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Se equally at Sb site. The electronic structure of Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 is investigated using the full potential linearized augmented plane wave method and the thermoelectric transport properties are calculated on the basis of semi-classical Boltzmann transport theory. Our band structure calculations show that Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 has semiconducting behavior with indirect band gap value of 0.98 eV which follow the empirical rule of 18 valence-electron content to bring semiconductivity in half Heusler compounds, indicating that one can have semiconducting behavior in multinary phase of half Heusler compounds if they full fill the 18 VEC rule and this open-up the possibility of designing thermoelectrics with high figure of merit in half Heusler compounds. We show that at high temperature of around 700K Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 has high thermoelectric figure of merit of ZT = 1.05 which is higher than that of TiCoSb (~ 0.95) suggesting that by going from ternary to multinary phase system one can enhance the thermoelectric figure of merit at higher temperatures

Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys

The electronic structures of TixZrx/2CoPbxTex, TixZrx/2Hfx/2CoPbxTex (x = 0.5), and the parent compound TiCoSb were investigated using the full potential linearized augmented plane wave method. The thermoelectric transport properties of these alloys are calculated on the basis of semi-classical Boltzmann transport theory. From the band structure calculations we show that the substitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower the band gap value and also change the indirect band (IB) gap of TiCoSb to the direct band (DB) gap. The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, and TixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (DB), and 0.93 eV (DB), respectively. All these alloys follow the empirical rule of 18 valence-electron content which is essential for bringing semiconductivity in half Heusler alloys. It is shown that the substitution of Hf at the Ti site improve the ZT value (~1.05) at room temperature, whereas there is no significant difference in ZT is found at higher temperature. Based on the calculated thermoelectric transport properties, we conclude that the appropriate concentration of Hf substitution can further improve the thermoelectric performance of TixZrx/2Hfx/2CoPbxTex