New Production Mechanism of Neutral Higgs Bosons with Right scalar tau neutrino as the LSP

Motived by the neutrino oscillation data, we consider the lightest tau sneutrino $\tilde \nu_{\tau_1}$ (which is mostly the right tau sneutrino) to be the lightest supersymmetric particle (LSP) in the framework of the minimal supersymmetric Standard Model. Both the standard and the non-standard trilinear scalar coupling terms are included for the right tau sneutrino interactions. The decay branching ratio of $\tilde \nu_{\tau_2} \to \tilde \nu_{\tau_1}+ h^0$ can become so large that the production rate of the lightest neutral Higgs boson ($h^0$) can be largely enhanced at electron or hadron colliders, either from the direct production of $\tilde \nu_{\tau_2}$ or from the decay of charginos, neutralinos, sleptons, and the cascade decay of squarks and gluinos, etc. Furthermore, because of the small LSP annihilation rate, $\tilde \nu_{\tau_1}$ can be a good candidate for cold dark matter.Comment: 11 pages, RevTex, 3 eps figures. We clarify the theoretical framework of this study, with a note added in the end, and correct an equation, with updated figure

Magnetically-induced reconstructions of the ground state in a few-electron Si quantum dot

We report unexpected fluctuations in the positions of Coulomb blockade peaks at high magnetic fields in a small Si quantum dot. The fluctuations have a distinctive saw-tooth pattern: as a function of magnetic field, linear shifts of peak positions are compensated by abrupt jumps in the opposite direction. The linear shifts have large slopes, suggesting formation of the ground state with a non-zero angular momentum. The value of the momentum is found to be well defined, despite the absence of the rotational symmetry in the dot.Comment: 5 pages, 4 figures, accepted to PR

Double-dot charge transport in Si single electron/hole transistors

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.Comment: 4 pages, 5 figures, to appear in Appl. Phys. Let

Generalized Rayleigh and Jacobi processes and exceptional orthogonal polynomials

We present four types of infinitely many exactly solvable Fokker-Planck equations, which are related to the newly discovered exceptional orthogonal polynomials. They represent the deformed versions of the Rayleigh process and the Jacobi process.Comment: 17 pages, 4 figure