Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer

In this study, the impact of the stress in SiNx surface passivation layers on off-state drain and gate leakage currents and off-state breakdown voltage in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is assessed. The SiNx films were deposited at room temperature by inductively coupled plasma chemical vapour deposition (ICP-CVD). Compared to unpassivated devices, the off-state drain and gate leakage currents of AlGaN/GaN HEMTs is increased by up to 2 orders of magnitude for a 200 nm thick SiNx passivation layer with 309 MPa compressive stress. The use of a bilayer SiNx passivation scheme comprising 70 nm SiNx with 309 MPa compressive stress followed by 130 nm SiNx with 880 MPa compressive stress resulted in off-state drain and gate leakage currents reduced by up to 1 order of magnitude when compared to unpassivated devices

Modeling of Ultra Low Capacitance Transient Voltage Suppression Diode for High ESD Protection

To improve key properties such as ultra-low capacitance (ULC) and high-voltage (HV) breakdown, we have performed a simulation work about transient voltage suppression (TVS) diodes. ULC-TVS diode was designed to employ a double deep trench to cut off the various parasitic effects that may degrade the device performance. The electrostatic discharge (ESD) protection is the targeting for the best applications in high-frequency and high-speed ICs. In this work, the device could present excellent performance in terms of very responsive ESD properties, high breakdown voltage, low leakage current, and very low capacitance level. The double trenches are aligned to the top electrode contact to restrict field crowding effects by the strong electric field intensity. The performance would be sufficient for the robust ESD nature up to IEC61000-4-2 (30 kV) and compatible with strong surge protection IEC61000-4-5 (10A). Their electrical properties have been evaluated for structure from simulation and the results are obtained at the device parameters. Several process of device design related effects on the electrical capability and can be optimized. Keywords: ULC-TVS diode, simulation (TCAD), characteristics, capacitance, ESD protection

Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer

In this study, the impact of the stress in SiNx surface passivation layers on off-state drain and gate leakage currents and off-state breakdown voltage in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is assessed. The SiNx films were deposited at room temperature by inductively coupled plasma chemical vapour deposition (ICP-CVD). Compared to unpassivated devices, the off-state drain and gate leakage currents of AlGaN/GaN HEMTs is increased by up to 2 orders of magnitude for a 200 nm thick SiNx passivation layer with 309 MPa compressive stress. The use of a bilayer SiNx passivation scheme comprising 70 nm SiNx with 309 MPa compressive stress followed by 130 nm SiNx with 880 MPa compressive stress resulted in off-state drain and gate leakage currents reduced by up to 1 order of magnitude when compared to unpassivated devices

Scalar cosmological perturbations from inflationary black holes

We study the correction to the scale invariant power spectrum of a scalar field on de Sitter space from small black holes that formed during a pre-inflationary matter dominated era. The formation probability of such black holes is estimated from primordial Gaussian density fluctuations. We determine the correction to the spectrum by first deriving the Keldysh propagator for a massless scalar field on Schwarzschild-de Sitter space. Our results suggest that the effect is strong enough to be tested -- and possibly even ruled out -- by observations.Comment: 41 pages, 11 figures, published versio

miR-23~27~24 clusters control effector T cell differentiation and function

Coordinated repression of gene expression by evolutionarily conserved microRNA (miRNA) clusters and paralogs ensures that miRNAs efficiently exert their biological impact. Combining both loss- and gain-of-function genetic approaches, we show that the miR-23~27~24 clusters regulate multiple aspects of T cell biology, particularly helper T (Th) 2 immunity. Low expression of this miRNA family confers proper effector T cell function at both physiological and pathological settings. Further studies in T cells with exaggerated regulation by individual members of the miR-23~27~24 clusters revealed that miR-24 and miR-27 collaboratively limit Th2 responses through targeting IL-4 and GATA3 in both direct and indirect manners. Intriguingly, although overexpression of the entire miR-23 cluster also negatively impacts other Th lineages, enforced expression of miR-24, in contrast to miR-23 and miR-27, actually promotes the differentiation of Th1, Th17, and induced regulatory T cells, implying that under certain conditions, miRNA families can fine tune the biological effects of their regulation by having individual members antagonize rather than cooperate with each other. Together, our results identify a miRNA family with important immunological roles and suggest that tight regulation of miR-23~27~24 clusters in T cells is required to maintain optimal effector function and to prevent aberrant immune responses

Streamer Wave Events Observed in Solar Cycle 23

In this paper we conduct a data survey searching for well-defined streamer wave events observed by the Large Angle and Spectrometric Coronagraph (LASCO) on-board the Solar and Heliospheric Observatory (SOHO) throughout Solar Cycle 23. As a result, 8 candidate events are found and presented here. We compare different events and find that in most of them the driving CMEs ejecta are characterized by a high speed and a wide angular span, and the CME-streamer interactions occur generally along the flank of the streamer structure at an altitude no higher than the bottom of the field of view of LASCO C2. In addition, all front-side CMEs have accompanying flares. These common observational features shed light on the excitation conditions of streamer wave events. We also conduct a further analysis on one specific streamer wave event on 5 June 2003. The heliocentric distances of 4 wave troughs/crests at various exposure times are determined; they are then used to deduce the wave properties like period, wavelength, and phase speeds. It is found that both the period and wavelength increase gradually with the wave propagation along the streamer plasma sheet, and the phase speed of the preceding wave is generally faster than that of the trailing ones. The associated coronal seismological study yields the radial profiles of the Alfv\'en speed and magnetic field strength in the region surrounding the streamer plasma sheet. Both quantities show a general declining trend with time. This is interpreted as an observational manifestation of the recovering process of the CME-disturbed corona. It is also found that the Alfv\'enic critical point is at about 10 R$_\odot$ where the flow speed, which equals the Alfv\'en speed, is $\sim$ 200 km s$^{-1}$

Current reversal with type-I intermittency in deterministic inertia ratchets

The intermittency is investigated when the current reversal occurs in a deterministic inertia ratchet system. To determine which type the intermittency belongs to, we obtain the return map of velocities of particle using stroboscopic recording, and numerically calculate the distribution of average laminar length ${}$. The distribution follows the scaling law of ${} \propto {\epsilon}^{-1/2}$, the characteristic relation of type-I intermittency.Comment: 4 pages, 7 figure

Real-space local polynomial basis for solid-state electronic-structure calculations: A finite-element approach

We present an approach to solid-state electronic-structure calculations based on the finite-element method. In this method, the basis functions are strictly local, piecewise polynomials. Because the basis is composed of polynomials, the method is completely general and its convergence can be controlled systematically. Because the basis functions are strictly local in real space, the method allows for variable resolution in real space; produces sparse, structured matrices, enabling the effective use of iterative solution methods; and is well suited to parallel implementation. The method thus combines the significant advantages of both real-space-grid and basis-oriented approaches and so promises to be particularly well suited for large, accurate ab initio calculations. We develop the theory of our approach in detail, discuss advantages and disadvantages, and report initial results, including the first fully three-dimensional electronic band structures calculated by the method.Comment: replacement: single spaced, included figures, added journal referenc

Coherent Phonons in Carbon Nanotubes and Graphene

We review recent studies of coherent phonons (CPs) corresponding to the radial breathing mode (RBM) and G-mode in single-wall carbon nanotubes (SWCNTs) and graphene. Because of the bandgap-diameter relationship, RBM-CPs cause bandgap oscillations in SWCNTs, modulating interband transitions at terahertz frequencies. Interband resonances enhance CP signals, allowing for chirality determination. Using pulse shaping, one can selectively excite speci!c-chirality SWCNTs within an ensemble. G-mode CPs exhibit temperature-dependent dephasing via interaction with RBM phonons. Our microscopic theory derives a driven oscillator equation with a density-dependent driving term, which correctly predicts CP trends within and between (2n+m) families. We also find that the diameter can initially increase or decrease. Finally, we theoretically study the radial breathing like mode in graphene nanoribbons. For excitation near the absorption edge, the driving term is much larger for zigzag nanoribbons. We also explain how the armchair nanoribbon width changes in response to laser excitation.Comment: 48 pages, 41 figure