Large non-adiabatic hole polarons and matrix element effects in the angle-resolved photoemission spectroscopy of dielectric cuprates

It has been made an extention of the conventional theory based on the assumption of the well isolated Zhang-Rice singlet to be a first electron-removal state in dielectric copper oxide. One assumes the photohole has been localised on either small (pseudo)Jahn-Teller polaron or large non-adiabatic polaron enclosed one or four to five $CuO_4$ centers, respectively, with active one-center valent $(^{1}A_{1g}-{}^{1,3}E_{u})$ manifold. In the framework of the cluster model we have performed a model microscopic calculation of the ${\bf k}$-dependence of the matrix element effects and photon polarization effects for the angle-resolved photoemission in dielectric cuprate like $Sr_{2}CuO_{2}Cl_{2}$. We show that effects like the ''remnant Fermi surface'' detected in ARPES experiment for $Ca_{2}CuO_{2}Cl_{2}$ may be, in fact, a reflection of the matrix element effects, not a reflection of the original band-structure Fermi surface, or the strong antiferromagnetic correlations. The measured dispersion-like features in the low-energy part of the ARPES spectra may be a manifestation of the complex momentum-dependent spectral line-shape of the large PJT polaron response, not the dispersion of the well-isolated Zhang-Rice singlet in antiferromagnetic matrix.Comment: 16 pages, TeX, 9 eps figures adde

Suppression of antiferromagnetic correlations by quenched dipole--type impurities

The effect of quenched random ferromagnetic bonds on the antiferromagnetic correlation length of a two--dimensional Heisneberg model is studied, applying the renormalization group method to the classical non--linear sigma model with quenched random dipole moments. It is found that the antiferromagnetic long range order is destroyed for any non--zero concentration, of the dipolar defects, even at zero temperature. Below a line T ~ concentration, the correlation length is independent of T, and decreases exponentially with concentration. At higher temperatures, itdecays exponentially with an effective stiffness constant which decreases with concentration/T. The results are used to estimate the three--dimensional N\'{e}el temperature, which decays linearly with $x$ at small concentrations, and drops precipitously at a critical concentration. These predictions are compared with experiments on doped copper oxides, and are shown to reproduce successfully some of the prominent features of the data.Comment: 34 pages, LateX, 4 figures Rport-no: TAU

Four-point probe measurements using current probes with voltage feedback to measure electric potentials

We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for BiSbTe$_3$ and Si$(111)-(7\times7)$ samples

Si(111) strained layers on Ge(111): evidence for c(2x4) domains

The tensile strained Si(111) layers grown on top of Ge(111) substrates are studied by combining scanning tunneling microscopy, low energy electron diffraction and first-principles calculations. It is shown that the layers exhibit c(2x4) domains, which are separated by domain walls along directions. A model structure for the c(2x4) domains is proposed, which shows low formation energy and good agreement with the experimental data. The results of our calculations suggest that Ge atoms are likely to replace Si atoms with dangling bonds on the surface (rest-atoms and adatoms), thus significantly lowering the surface energy and inducing the formation of domain walls. The experiments and calculations demonstrate that when surface strain changes from compressive to tensile, the (111) reconstruction converts from dimer-adatom-stacking fault-based to adatom-based structures